K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung
MPN: K4B4G1646E-BYMA β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $14.37 | $14.37 |
| 10 | $13.5 | $135.00 |
| 100 | $12.8 | $1,280.00 |
| 500 | $12.1 | $6,050.00 |
| 1,000 | $11.5 | $11,500.00 |
Drop-in alternatives for K4B4G1646E-BYMA β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4B4G1646E-BYK000
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646E-BCMA
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646E-BCNB
β Drop-Inβ 99,999 In Stock
$3.5 / Unit
View Datasheet βMT41K512M16HA-125
β Drop-Inπ Reference alternative (not in catalog)
H5TQ4G63CFR-PBC
β Drop-Inπ Reference alternative (not in catalog)
AS4C256M16D3LC-10BCN
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646E-BYMA Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Density | 4 Gb |
| Organization | 256M x 16 |
| Supply Voltage | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | 933 MHz |
| Data Rate | 1866 Mbps/pin |
| Operating Temperature | 0Β°C to +95Β°C |
| Operating Current | 14 mA |
| Standby Current | 2 mA, 3 mA |
| Package | FBGA-96 |
| Mounting Type | Surface Mount |
| RoHS | Compliant |
| CAS Latency | [DATA_NEEDED: CAS Latency] |
| Burst Length | [DATA_NEEDED: Burst Length] |
| Number of Pins | 96 |
K4B4G1646E-BYMA Pin Configuration
| Pin A1 | VDD β Power supply (1.35V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin B1 | VDDQ β DQ power supply |
| Pin B2 | DQ2 β Data input/output 2 |
| Pin B3 | DQ3 β Data input/output 3 |
| Pin B4 | VSSQ β DQ ground |
| Pin C1 | VREFCA β Reference voltage for command/address |
| Pin C2 | A0 β Address input 0 |
| Pin C3 | A1 β Address input 1 |
| Pin C4 | A2 β Address input 2 |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4B4G1646E-BYMA is suitable for 6 applications: Laptop Memory Modules, Networking Equipment, Industrial Computing, Embedded Systems, Data Center Servers, Consumer Electronics.
Laptop Memory Modules
The K4B4G1646E-BYMA's 1.35V operation and 4Gb density make it ideal for DDR3L SO-DIMMs in laptops and ultrabooks. Its low power consumption extends battery life, while the 1866 Mbps data rate supports demanding multitasking. The FBGA-96 package allows compact module designs. When used in SO-DIMMs, it pairs with a DDR3L controller and requires careful routing to maintain signal integrity at high speeds.
Recommended
Networking Equipment
In routers and switches, the K4B4G1646E-BYMA provides high-bandwidth packet buffering with low latency. Its 1866 Mbps data rate handles high-throughput traffic, while the 1.35V supply reduces power in always-on equipment. The device's on-die termination and ZQ calibration ensure signal quality on dense PCBs. It is often paired with a network processor and requires proper decoupling for stable operation.
Recommended
Industrial Computing
The K4B4G1646E-BYMA operates over 0Β°C to +95Β°C, suitable for industrial PCs and embedded systems. Its 4Gb density supports applications like machine vision and process control. The 1.35V operation reduces heat generation, important in sealed enclosures. The FBGA-96 package withstands vibration, and the device's auto precharge simplifies memory management. It works with industrial-grade controllers and benefits from conformal coating in harsh environments.
Recommended
Embedded Systems
For embedded applications like medical devices and point-of-sale terminals, the K4B4G1646E-BYMA offers a balance of density, speed, and power. Its 4Gb capacity supports complex software, while 1.35V operation is compatible with battery-powered designs. The device's small FBGA-96 footprint saves board space. It is typically used with an application processor and requires careful power sequencing.
Recommended
Data Center Servers
In servers, the K4B4G1646E-BYMA can be used in DDR3L RDIMMs or UDIMMs for cost-effective memory expansion. Its 1866 Mbps speed supports high-bandwidth workloads, and the 1.35V supply reduces power in large memory arrays. The device's E-die technology ensures reliability under continuous operation. It is often paired with server chipsets and requires thermal management in high-density configurations.
Recommended
Consumer Electronics
The K4B4G1646E-BYMA is used in smart TVs, set-top boxes, and gaming consoles for main memory. Its 4Gb density supports HD video streaming and gaming, while 1.35V operation keeps power low. The FBGA-96 package enables slim device designs. It works with SoCs and requires proper ESD protection in consumer environments.
Recommended
Recommended Products Summary
Engineering reference data for K4B4G1646E-BYMA β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4B4G1646E-BYK000 | MT41K512M16HA-125 | H5TQ4G63CFR-PBC |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Samsung E-die process technology (vs MT41K512M16HA-125)
- 1.35V low-power operation (vs H5TQ4G63CFR-PBC)
- Long-term availability from Samsung (vs AS4C256M16D3LC-10BCN)
Design Notes
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within 100 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the power entry point. Follow the layout guidelines in the Samsung datasheet to minimize crosstalk and signal reflection.
The K4B4G1646E-BYMA requires a stable 1.35V supply with low ripple. Use a dedicated DDR3L power regulator with adequate current capability (at least 1A for a single device). Ensure the VREFCA and VREFDQ voltages are generated from a precision divider and filtered with a 0.1uF capacitor. Power sequencing should follow JEDEC standards: apply VDD before VDDQ, and VDDQ before VREF.
The device operates up to +95Β°C, but for reliable long-term operation, keep the junction temperature below 85Β°C. In high-density applications, ensure adequate airflow or use a heatsink. The FBGA-96 package has a thermal resistance of approximately 20Β°C/W (theta_JA) with proper PCB thermal vias. Calculate power dissipation as VDD * IDD (typical 14mA) plus switching losses.
Compliance Information
RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.
