IS43TR16256AL-125KBLI-TR vs K4B4G1646E-BYMATCV Comparison
Detailed side-by-side comparison of IS43TR16256AL-125KBLI-TR by ISSI, Integrated Silicon Solution Inc and K4B4G1646E-BYMATCV by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBLI-TR β ActiveSamsung Electronics
K4B4G1646E-BYMATCV
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV β ActiveSpecification Comparison
| Parameter | IS43TR16256AL-125KBLI-TR | K4B4G1646E-BYMATCV |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.25 | $5.90 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | 4 Gbit (256M x 16) |
| Data Bus Width | 16 bit | β |
| Clock Frequency | 800 MHz | β |
| Data Rate | 1600 Mbps | 1866 Mbps |
| CAS Latency | 11 | Programmable (e.g., 13, 12, 11) |
| Supply Voltage (VDD/VDDQ) | 1.35V Β± 0.1V, -0.067V | β |
| Backward Compatible Voltage | 1.5V | β |
| Row Cycle Time (tRC) | 20 ns | β |
| Row Active Time (tRAS) | 20 ns | β |
| Operating Temperature Range | -40Β°C to +95Β°C (TC) | -40Β°C to +95Β°C |
| Package | 96-TWBGA (9x13 mm) | 96-ball FBGA |
| Mounting Type | Surface Mount | β |
| Burst Length | 8 | 8 (with burst chop 4) |
| On-Die Termination (ODT) | Yes | Yes |
| Refresh Modes | Auto-refresh, Self-refresh | β |
| RoHS Status | Compliant | Compliant |
| Supply Voltage | β | 1.35 V |
| I/O Voltage (VDDQ) | β | 1.35 V |
| Number of Pins | β | 96 |
| Number of Banks | β | 8 |
| Auto Precharge | β | Yes |
| Self-Refresh | β | Yes |