IS46TR16256A-125KBLA2 vs K4B4G1646D-BYK00 Comparison
Detailed side-by-side comparison of IS46TR16256A-125KBLA2 by ISSI, Integrated Silicon Solution Inc and K4B4G1646D-BYK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS46TR16256A-125KBLA2 - 4Gb DDR3 SDRAM 256Mx16 | ISSI
IS46TR16256A-125KBLA2 β ActiveSamsung Electronics
K4B4G1646D-BYK00
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 β ActiveSpecification Comparison
| Parameter | IS46TR16256A-125KBLA2 | K4B4G1646D-BYK00 |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.20 | $7.50 |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit (256M x 16) | β |
| Data Rate | 1600 MT/s | 1600 Mbps |
| Clock Frequency | 800 MHz | β |
| Supply Voltage | 1.5 V | 1.35 V (also operates at 1.5 V) |
| Low Voltage Support | 1.35 V (backward compatible) | β |
| tRCD (RAS to CAS Delay) | 20 ns | β |
| Operating Current | 290 mA | β |
| Operating Temperature Range | 0Β°C to +95Β°C (Tc) | β |
| Package | 96-TWBGA (9x13 mm) | 96-ball TFBGA |
| Mounting Type | Surface Mount | β |
| Number of Banks | 8 | β |
| Interface | Parallel | β |
| RoHS Status | Compliant | β |
| Lifecycle Status | Active | β |
| Density | β | 4 Gb |
| Organization | β | 256M x 16 |
| Number of Terminals | β | 96 |
| Operating Temperature | β | 0Β°C to 85Β°C |
| CAS Latency | β | Programmable |
| Additional Features | β | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| RoHS | β | Compliant |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Package Shape | β | RECTANGULAR |
| Temperature Grade | β | OTHER |