K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
MPN: K4B4G1646D-BYK00 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $10.32 | $10.32 |
| 10 | $9.5 | $95.00 |
| 100 | $8.75 | $875.00 |
| 500 | $8 | $4,000.00 |
| 1,000 | $7.5 | $7,500.00 |
Drop-in alternatives for K4B4G1646D-BYK00 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4B4G1646D-BYK0
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646D-BCMA
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646E-BMMA
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646D-BYMA
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646D-BYK0000
β Drop-Inπ Reference alternative (not in catalog)
K4A4G085WE-BCRC
β‘ Same Packageπ Reference alternative (not in catalog)
K4B4G1646D-BYK00 Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Density | 4 Gb |
| Organization | 256M x 16 |
| Data Rate | 1600 Mbps |
| Supply Voltage | 1.35 V (also operates at 1.5 V) |
| Package | 96-ball TFBGA |
| Number of Terminals | 96 |
| Operating Temperature | 0Β°C to 85Β°C |
| CAS Latency | Programmable |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| RoHS | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes |
| Package Shape | RECTANGULAR |
| Temperature Grade | OTHER |
K4B4G1646D-BYK00 Pin Configuration
| Pin A1 | VDD β Power supply |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ2 β Data input/output 2 |
| Pin B3 | DQ3 β Data input/output 3 |
| Pin C1 | VDDQ β I/O power supply |
| Pin C2 | DQ4 β Data input/output 4 |
| Pin C3 | DQ5 β Data input/output 5 |
| Pin D1 | VSSQ β I/O ground |
| Pin D2 | DQ6 β Data input/output 6 |
| Pin D3 | DQ7 β Data input/output 7 |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4B4G1646D-BYK00 is suitable for 6 applications: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Servers and Data Centers.
Laptop Memory
The K4B4G1646D-BYK00 is ideal for laptop memory modules due to its low 1.35V operation, reducing power consumption and extending battery life. Its 1600 Mbps data rate provides sufficient bandwidth for everyday computing tasks. The 96-ball TFBGA package allows compact module designs, fitting into slim laptop form factors. With 4Gb density, it supports 4GB and 8GB SO-DIMM configurations, meeting the memory demands of modern operating systems and applications.
Recommended
Embedded Systems
In embedded systems, the K4B4G1646D-BYK00 provides high-density memory for applications like industrial controllers, networking equipment, and single-board computers. Its dual-voltage support (1.35V/1.5V) allows integration into existing 1.5V designs without level shifting. The programmable CAS latency and dynamic on-chip termination simplify timing configuration, while the 0Β°C to 85Β°C range suits most industrial environments. The 96FBGA package is suitable for space-constrained PCBs.
Recommended
Networking Equipment
The K4B4G1646D-BYK00 is well-suited for networking equipment such as routers, switches, and firewalls, where high bandwidth and low power are critical. Its 1600 Mbps data rate supports high-throughput packet processing, and the low 1.35V supply reduces heat generation in dense chassis. The 96FBGA package enables high-density memory arrays on line cards. The device's robust signal integrity features, including ZQ calibration and dynamic on-chip termination, ensure reliable operation in noisy environments.
Recommended
Industrial PCs
For industrial PCs, the K4B4G1646D-BYK00 offers reliable memory with a 0Β°C to 85Β°C operating range, suitable for factory automation and process control. Its low power consumption is beneficial for fanless designs, and the 4Gb density supports demanding applications like HMI and data logging. The dual-voltage capability allows use in legacy 1.5V systems, easing migration to DDR3L. The 96FBGA package provides robust solder joints for vibration-prone environments.
Recommended
Consumer Electronics
In consumer electronics like smart TVs, set-top boxes, and gaming consoles, the K4B4G1646D-BYK00 delivers the memory bandwidth needed for multimedia processing. Its low voltage operation reduces power consumption, important for energy-efficient devices. The 1600 Mbps data rate supports Full HD video streaming and gaming. The compact 96FBGA package allows slim device designs. The device's auto precharge and data mask features enhance memory efficiency.
Recommended
Servers and Data Centers
The K4B4G1646D-BYK00 is used in entry-level servers and data center equipment where power efficiency is paramount. Its 1.35V operation reduces energy costs in large-scale deployments. The 4Gb density allows cost-effective memory capacity, and the 1600 Mbps data rate meets the needs of cloud computing and virtualization. The 96FBGA package supports high-density DIMMs. The device's low power and thermal characteristics contribute to overall system reliability.
Recommended
Recommended Products Summary
Engineering reference data for K4B4G1646D-BYK00 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4B4G1646D-BYK0 | K4B4G1646D-BCMA | K4B4G1646E-BMMA |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1600 Mbps | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V |
| Operating Temperature | 0Β°C to 85Β°C | 0Β°C to 85Β°C | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Dual-voltage support (1.35V/1.5V) (vs K4B4G1646D-BYK0)
- D-die process technology (vs K4B4G1646E-BMMA)
- 1600 Mbps data rate (vs K4B4G1646D-BCMA)
Design Notes
For reliable operation at 1600 Mbps, ensure controlled impedance traces for DQ, DQS, and address/command lines. Use 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 100 mils for data lines and 500 mils for address/command. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise.
The K4B4G1646D-BYK00 supports both 1.35V and 1.5V supplies. When using 1.35V, ensure the power supply can provide sufficient current for the memory's peak current demands. Use a dedicated voltage regulator for VDD and VDDQ to avoid noise coupling. Monitor power sequencing: VDD and VDDQ should ramp up together, and VTT should follow after VDDQ is stable.
The 96-ball TFBGA package has a thermal resistance that depends on PCB layout. For high-density applications, ensure adequate thermal vias under the package to dissipate heat. The operating temperature range is 0Β°C to 85Β°C; keep the junction temperature below 85Β°C by providing proper airflow or heatsinking if necessary. In fanless designs, consider reducing data rate or using lower power modes.
Compliance Information
RoHS compliant and lead-free/halogen-free per datasheet. Not AEC-Q100 qualified.
