ISC009N06LM5ATMA1 vs BSC036NE7NS3GATMA1 Comparison
Detailed side-by-side comparison of ISC009N06LM5ATMA1 by Infineon and BSC036NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 ✓ ActiveSpecification Comparison
| Parameter | ISC009N06LM5ATMA1 | BSC036NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.86 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 3 |
| Technology | OptiMOS 5 60V N-channel trench MOSFET | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 75 V |
| Continuous Drain Current (ID) at Ta | 41 A | — |
| Continuous Drain Current (ID) at Tc | 348 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 400 A |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS threshold typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm | — |
| Power Dissipation at Ta (PD) | 3 W | — |
| Power Dissipation at Tc (PD) | 214 W | — |
| Operating Temperature Range | -55 C to +175 C | -55C to +175C |
| Package | PG-TSON-8-3 (SuperSO8 5x6) | PG-TDSON-8-7 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| RoHS Status | Compliant | ROHS3 Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| On-Resistance (RDS(on) max @ VGS=10V) | — | 3.6 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | 2.6 V |
| Total Gate Charge (Qg typ @ VGS=10V) | — | 45 nC |
| Rise Time (tr typ) | — | 13 ns |
| Fall Time (tf typ) | — | 11 ns |
| Power Dissipation (PD max, Tc=25C) | — | 156 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.8 C/W |