ISC011N04NM7VATMA1 vs IPC100N04S5L1R5ATMA1 Comparison
Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveInfineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveSpecification Comparison
| Parameter | ISC011N04NM7VATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS-5 40 V |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 38 A | β |
| Continuous Drain Current (ID) at TC | 256 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΞ© | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 136 W | β |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | β |
| Technology | Trench MOSFET, silicon | β |
| Package | PG-TDSON-8 (source-down) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | -55C to +175C |
| RoHS Compliance | Compliant (per Infineon product page) | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | MSL1 (260C peak reflow) |
| Polarity / Channel Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | 20 V |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | β | 115 W |
| On-Resistance RDS(on) at VGS=10 V | β | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | β | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | β | Yes |
| RoHS Status | β | Compliant (Green Product) |
| Avalanche Tested | β | 100% |