ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon
MPN: ISC011N04NM7VATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.71 | $7.10 |
| 100 | $0.62 | $62.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.48 | $480.00 |
| 5,000 | $0.41 | $2,050.00 |
ISC011N04NM7VATMA1 Overview
An N-channel enhancement-mode power MOSFET is a voltage-controlled three-terminal device in which a positive gate-to-source voltage inverts a p-channel surface to form a conducting n-channel between drain and source. Within the broader taxonomy, MOSFETs belong to the discrete power-semiconductor family alongside IGBTs and wide-bandgap (SiC/GaN) FETs, and OptiMOS 7 represents Infineon's latest 40 V trench-generation silicon platform engineered to reduce switching and conduction losses simultaneously. The "N-channel 40 V, 1.1 mΩ" subclass is widely used as a synchronous rectifier, low-side switch, and hot-swap FET.
Key features of the ISC011N04NM7V include price-performance optimization, up to 3× wider safe-operating area than the prior generation, built-in short-circuit current limitation, an elevated threshold voltage up to 3.2 V for noise immunity, controlled transconductance (gfs) for clean current sensing, and a source-down PG-TDSON-8 footprint that pulls the main current path to the top of the package to minimize PCB loop inductance. The widened SOA combined with short-circuit ruggedness enables use in harsh environments where transient overloads and inductive kickbacks are common.
Architecturally the device is a single-die trench MOSFET in a leadless source-down package. The source-down topology places both source contacts and the thermal pad on the same side, dramatically lowering thermal resistance and parasitic source inductance compared with traditional drain-down TDSON layouts. Combined with controlled gfs, this allows very high peak-current handling (256 A pulsed at TC) while maintaining a predictable current-sense signal.
Typical applications include e-scooter and light-EV motor drives, 12 V/24 V automotive e-fuse and battery protection, telecom 48 V hot-swap, server point-of-load synchronous rectification, USB-PD source sinks, and high-current DC-DC buck stages. In each scenario the wide SOA, 1.1 mΩ RDS(on), and source-down thermal advantage combine to shrink solution size and improve efficiency.
When designing with this part, observe the maximum junction temperature and ensure the PCB copper area on the source pad is sized to keep thermal resistance within budget. The elevated Vth up to 3.2 V means standard 3.3 V microcontrollers can drive this FET directly without a dedicated gate-driver IC in low-frequency switching roles, simplifying BOM cost.
This page synthesizes distributor pricing, parametric drop-in alternatives, and application design guidance not consolidated on a single manufacturer datasheet - enabling faster part selection and BOM risk reduction for power-system design engineers.
Drop-in alternatives for ISC011N04NM7VATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC011N04NM7VATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, MSL Level, Product Family, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC011N04NM7V
✅ Drop-In📋 Reference alternative (not in catalog)
ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IPC100N04S5L1R5ATMA1
✅ Drop-In✓ In Stock
$1.18 / Unit
View Datasheet →IPC100N04S51R7ATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →BSC019N04LSTATMA1
✅ Drop-In✓ In Stock
$1.21 / Unit
View Datasheet →ISC011N04NM7VATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A |
| Continuous Drain Current (ID) at TC | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ |
| Power Dissipation (TA) | 3 W |
| Power Dissipation (TC) | 136 W |
| Gate Threshold Voltage (Vth) | Up to 3.2 V |
| Technology | Trench MOSFET, silicon |
| Package | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) |
| Operating Temperature Range | -55 °C to +175 °C (TJ) |
| RoHS Compliance | Compliant (per Infineon product page) |
| MSL Level | MSL 1 (per JEDEC J-STD-020) |
ISC011N04NM7VATMA1 Pin Configuration
| Pin 1 | Source — Source connection (top-side thermal pad also tied to source) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain connection |
| Pin 6 | Drain — Drain connection |
| Pin 7 | Drain — Drain connection |
| Pin 8 | Drain — Drain connection |
Typical Applications
ISC011N04NM7VATMA1 is suitable for 7 applications: 12 V/24 V Automotive E-Fuse and Battery Protection, E-Scooter and Light-EV BLDC Motor Drive, Server and Telecom 48 V Point-of-Load Synchronous Rectifier, USB-PD Source Sink and High-Current Hot-Swap, Industrial 24 V Solenoid and Relay Driver, High-Current DC-DC Buck Stage for Graphics and AI Accelerator Cards, Solar Micro-Inverter and Battery-Storage Low-Side Switch.
12 V/24 V Automotive E-Fuse and Battery Protection
The ISC011N04NM7VATMA1's 1.1 mΩ RDS(on), 256 A pulsed current capability, and up to 3.2 V gate threshold make it ideal as the main disconnect FET in 12 V/24 V automotive e-fuse and battery-protection units. Placed in the high-side path between the battery and the DC bus, the device sustains cold-crank and load-dump transients within its 40 V VDS rating while dissipating only a few watts at 100 A continuous load. The built-in short-circuit current limit and 3× wider SOA versus prior generations reduce the need for upstream TVS protection, shrinking BOM cost in mass-production BCM and BMS modules.
Recommended
E-Scooter and Light-EV BLDC Motor Drive
In 24 V-36 V e-scooter and light-EV BLDC motor inverters, the ISC011N04NM7VATMA1 is used as the low-side switching FET in three-phase bridge topologies. Its 1.1 mΩ RDS(on) minimizes conduction loss during high-torque acceleration, while the source-down PG-TDSON-8 package drops heat directly into the PCB copper for natural convection cooling. The wide SOA also tolerates regenerative-braking back-EMF spikes that would otherwise demand a 60 V part. Paired with a small gate-driver, the result is a compact, high-efficiency inverter stage for sub-1 kW traction motors.
Recommended
Server and Telecom 48 V Point-of-Load Synchronous Rectifier
For 48 V-to-12 V bus converters and 48 V point-of-load synchronous-rectifier stages in server and telecom hardware, the ISC011N04NM7VATMA1 can serve as a low-side rectifier in a buck-derived topology where the operating switch-node stays below 40 V. Its 1.1 mΩ RDS(on) reduces rectifier conduction loss at high secondary current, improving overall efficiency by 0.5-1 % versus prior 1.5 mΩ generations. The controlled transconductance gfs simplifies current-mode control loop design, while the wide SOA absorbs transient overloads when downstream capacitors hot-swap onto the bus.
Recommended
USB-PD Source Sink and High-Current Hot-Swap
In USB-Power-Delivery source and sink applications delivering 100 W-240 W (28 V/36 V/40 V EPR modes), the ISC011N04NM7VATMA1 functions as the hot-swap and over-current disconnect FET on the VBUS rail. Its 40 V VDS supports the 40 V Extended Power Range envelope, while the 1.1 mΩ RDS(on) keeps cable-drop loss under 1 % even at 5 A. The integrated short-circuit current limit provides hardware-level fault protection, simplifying USB-PD controller firmware. The 3.2 V Vth allows direct low-side switching from 3.3 V logic in lower-power USB-PD sub-states.
Recommended
Industrial 24 V Solenoid and Relay Driver
In industrial 24 V PLC output modules and solenoid/relay driver boards, the ISC011N04NM7VATMA1 is used as a low-side switch for inductive loads up to several amps. Its 40 V VDS rating comfortably absorbs 24 V rail plus inductive kickback when paired with a flyback diode, while the 1.1 mΩ RDS(on) keeps driver dissipation low even at 5 A continuous. The elevated Vth up to 3.2 V prevents false turn-on in noisy factory environments, eliminating the need for an external gate pull-down in many designs. The source-down package simplifies thermal management in enclosed industrial housings.
Recommended
High-Current DC-DC Buck Stage for Graphics and AI Accelerator Cards
In AI-accelerator and high-end GPU card voltage-regulation modules (VRMs), the ISC011N04NM7VATMA1 serves as the low-side synchronous rectifier in multi-phase buck converters operating from 12 V input to sub-1 V core rails. Its 1.1 mΩ RDS(on) reduces total converter loss at high output current, while the source-down PG-TDSON-8 package enables top-side cooling via a thermal interface to the card's heatsink or cold plate. The short-circuit current limit and wide SOA protect against GPU load transients that can momentarily pull 2-3× the steady-state current during boost-clock events.
Recommended
Solar Micro-Inverter and Battery-Storage Low-Side Switch
In residential solar micro-inverters and low-voltage battery-storage DC-DC stages operating from 24 V-36 V battery packs, the ISC011N04NM7VATMA1 functions as the low-side switch or synchronous rectifier in non-isolated buck/boost topologies. Its 1.1 mΩ RDS(on) maximizes round-trip efficiency, while the 40 V VDS accommodates the battery's maximum charge voltage plus margin. The built-in short-circuit protection and wide SOA handle the inrush transients that occur when battery packs connect to the inverter input, replacing a discrete fuse and TVS combination to reduce BOM cost and improve reliability.
Recommended
Recommended Products Summary
Engineering reference data for ISC011N04NM7VATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC011N04NM7V | ISC015N06NM5ATMA1 | IPC100N04S5L1R5ATMA1 | IPC100N04S51R7ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 (source-down) | PG-TDSON-8 (source-down) | PG-TDSON-8 (source-down) | PG-TDSON-8 (source-down) | PG-TDSON-8 (source-down) | PG-TDSON-8 (source-down) |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 60 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 1.1 mΩ | 1.1 mΩ | 1.5 mΩ | 1.5 mΩ | 1.7 mΩ | 1.9 mΩ |
| Continuous ID at TC=25°C | 256 A | 256 A | 240 A | 100 A | 100 A | 100 A |
| Generation / Family | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS |
| Gate Threshold Vth (max) | 3.2 V | 3.2 V | 3.5 V | 2.5 V | 2.5 V | 2.5 V |
| Source-Down Package | Yes | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty-1, as of 2026-09-15) | $0.78 | $0.75 | $0.95 | $0.55 | $0.50 | $0.45 |
Key Differentiators
- Lowest RDS(on) in 40V PG-TDSON-8 source-down family (vs BSC019N04LSTATMA1)
- OptiMOS 7 generation with 3× wider SOA (vs IPC100N04S51R7ATMA1 (OptiMOS 5))
- Higher gate threshold (3.2 V) for noise immunity (vs IPC100N04S5L1R5ATMA1 (Vth 2.5 V))
Design Notes
Estimated: at continuous ID = 30 A and RDS(on) = 1.1 mΩ (junction temp 175 °C), conduction loss is approximately 1.0 W. With the source-down PG-TDSON-8 package, thermal performance depends primarily on PCB copper area on the source pad - use at least 1 oz copper over 50×50 mm² on top side, with thermal vias to an inner 2 oz plane, to keep junction rise below 50 °C. Without this copper, the device may thermally limit before reaching rated current.
Place the gate-drive loop (gate resistor + driver GND) within 5 mm of the gate pin to minimize ringing. Keep the high-current source loop area (input cap negative → source pad → drain load) under 20 mm² to reduce parasitic inductance that can cause VDS overshoot during switching. The source-down package makes this layout inherently easier than drain-down TDSON - just keep the source copper continuous and unbroken beneath the IC.
Do not assume 3.3 V logic can drive this FET - with Vth up to 3.2 V, a 3.3 V GPIO barely reaches the threshold region and RDS(on) will be much higher than specified. Use a 6 V or 10 V gate-drive supply, or a charge-pump / gate-driver IC like the 2ED21064S06JXUMA1. Also avoid exceeding VGS = ±20 V absolute max; a 10 V zener clamp on the gate is recommended protection against ringing on long gate traces.
For pulsed loads exceeding 100 A, verify SOA against the datasheet's 'single-pulse' curve at the expected pulse duration and duty cycle. The OptiMOS 7 generation's 3× wider SOA versus prior generations provides margin for typical e-fuse and hot-swap transients, but inductive kickback above 40 V will still damage the device. Pair with a TVS diode or transient voltage suppressor for inductive-load switching.
Compliance Information
RoHS compliant per Infineon product page. AEC-Q100 automotive qualification status not explicitly stated for the ISC011N04NM7V base part; automotive-grade variants exist within the OptiMOS 7 family. Halogen-free status not explicitly verified in the verified web data.
