ISZ028N03LF2SATMA1 vs ISZ056N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISZ028N03LF2SATMA1 by Infineon and ISZ056N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveInfineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISZ028N03LF2SATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.49 |
| FET Type | N-Channel | β |
| Technology | StrongIRFET 2 (Trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Tc | 128 A | 72 A |
| Continuous Drain Current (ID) at Ta | 22 A | 16 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | 2.35 V (typ) |
| On-Resistance (RDS(on)) max | 2.8 mΞ© | β |
| Power Dissipation (Tc) | 83 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TSDSON-8 FL (FL = flat lead) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction, typical) | -55 C to +175 C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge] |
| Manufacturer | β | Infineon Technologies |
| Series | β | StrongIRFET 2 |
| Transistor Type | β | N-Channel MOSFET |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage max] |
| On-Resistance (RDS(on)) max at VGS=10V | β | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 52 W |