ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
MPN: ISZ056N03LF2SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.85 | $8.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.58 | $290.00 |
| 1,000 | $0.49 | $490.00 |
ISZ056N03LF2SATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to control current flow between drain and source. MOSFETs sit within the discrete semiconductor hierarchy: MOSFET -> transistor -> semiconductor -> electronic component. The StrongIRFET 2 family targets low to high switching frequencies and is engineered to minimize conduction loss (RDS(on)) and switching loss simultaneously, making them well-suited to synchronous rectification, DC-DC conversion, and motor drive stages.
This device delivers an industry-leading 5.6 mOhm max RDS(on) in a compact 3.3x3.3 mm PQFN outline, an area that is roughly 60% smaller than equivalent DPAK or D2PAK footprints. The low figure-of-merit (FOM = RDS(on) x Qg) reduces both conduction and switching losses, improving overall converter efficiency. The part is fully lead-free, RoHS compliant, and uses an environmentally friendly Pb-free plating.
Typical applications include synchronous rectification in 24 V telecom and industrial bus converters, OR-ing and hot-swap controllers in server power supplies, BLDC motor drivers in 12 V e-mobility tools, USB Power Delivery (PD) and DC-DC buck/boost converters, and battery management protection FETs in 1S-3S Li-ion packs. The low gate charge and low thermal resistance of the exposed pad enable fast switching at 200 kHz to 1 MHz without compromising efficiency.
Design considerations include minimizing source-inductance loop area in the PCB layout, providing sufficient copper pour under the exposed pad for heat extraction, and ensuring the gate driver can supply 4.5 V VGS for full enhancement. The maximum junction temperature is 175 C with appropriate derating, and Tj reference thermal resistance is 50 C/W max at steady state.
This page synthesizes Infineon datasheet specifications, distributor pricing, drop-in alternatives, and practical design guidance not found on the manufacturer product page alone.
Drop-in alternatives for ISZ056N03LF2SATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISZ056N03LF2SATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Continuous Drain Current (ID) at TA=25C, Gate Threshold Voltage (VGS(th)).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISZ033N03LF2SATMA1
✅ Drop-In✓ In Stock
$0.68 / Unit
View Datasheet →ISC028N03LF2SATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →BSC0921NDIATMA1
✅ Drop-In✓ In Stock
$0.68 / Unit
View Datasheet →BSZ0901NSIATMA1
✅ Drop-In✓ In Stock
$0.34 / Unit
View Datasheet →BSZ0501NSIATMA1
✅ Drop-In✓ In Stock
$0.29 / Unit
View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →ISZ056N03LF2SATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | StrongIRFET 2 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta | 16 A |
| Continuous Drain Current (ID) at Tc | 72 A |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 52 W |
| Operating Temperature Range | -55 C to +175 C |
| Package | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
ISZ056N03LF2SATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | D — Drain |
Safe Operating Area (DC)
Typical Applications
ISZ056N03LF2SATMA1 is suitable for 6 applications: 24V Synchronous Rectification, Server OR-ing and Hot-Swap, BLDC Motor Drive (12V/24V), USB Power Delivery Buck Converter, 1S-3S Li-ion Battery Protection, Industrial 24V Bus Switch.
24V Synchronous Rectification
The ISZ056N03LF2SATMA1 fits synchronous rectification in 24V industrial and telecom bus converters because its 30V VDS rating provides 25% margin above 24V nominal while the 5.6 mOhm RDS(on) at VGS=10V minimizes conduction loss in the low-side FET path. At 30A output current, conduction loss is approximately 5.0W per FET, allowing a 1MHz switching frequency without exceeding the 52W Tc power dissipation limit. The PG-TSDSON-8 footprint exposes the drain pad for direct heatsinking to inner copper layers, which is critical in brick-style isolated DC-DC modules. Compared to a Schottky diode replacement, the synchronous FET reduces forward drop from 0.5V to 5.6mOhm x I_load, improving efficiency by 3-5% at full load. Pair with a half-bridge gate driver such as 2ED21064S06JXUMA1 for proper timing and dead-time control.
Recommended
Server OR-ing and Hot-Swap
In server redundant power supply OR-ing and 12V/24V hot-swap controllers, the ISZ056N03LF2SATMA1's 72A Tc current rating handles 12V bus inrush up to 200A for short durations without failure. Its 30V VDS provides substantial transient margin in 24V systems, and the low 5.6 mOhm RDS(on) keeps steady-state power dissipation below 5W at 30A continuous. The PG-TSDSON-8 package's exposed drain pad enables direct PCB copper heatsinking, eliminating the need for a discrete heatsink in 1U server form factors. The N-channel gate threshold of 2.35V ensures full enhancement at standard 10V gate drive, and the low Qg allows fast turn-off during overcurrent events. Use an external TVS and soft-start controller such as BTS70041EPZXUMA1 for full hot-swap protection.
Recommended
BLDC Motor Drive (12V/24V)
For 12V to 24V brushless DC motor drives in cordless tools, drones, and e-mobility, the ISZ056N03LF2SATMA1 serves as a low-side switch in three-phase half-bridges. The 5.6 mOhm RDS(on) limits conduction loss to approximately 2W per FET at 20A peak motor current, well within the 3W Ta power dissipation when paired with adequate copper pour. The StrongIRFET 2 technology's low FOM (RDS(on) x Qg) enables PWM frequencies up to 50kHz without excessive switching loss, giving finer torque control and lower audible noise. The 30V VDS comfortably handles 24V battery transients from regenerative braking, and the 175C max junction temperature supports harsh underhood environments. Pair with the 2EDL8124GXUMA1 three-phase gate driver for a complete BLDC solution.
Recommended
USB Power Delivery Buck Converter
In USB Power Delivery 3.1 PPS buck converters delivering 5V to 20V at 5A, the ISZ056N03LF2SATMA1's 5.6 mOhm RDS(on) enables synchronous rectification with less than 1.5W loss at 5A load. The PG-TSDSON-8 footprint is small enough to fit alongside the controller and inductor in a 25 mm^2 PCB area, ideal for compact travel adapters. The 30V VDS rating tolerates 28V USB PD EPR transients with margin, and the low gate charge allows switching at 300 kHz to 500 kHz for high power density. At 100W output, total FET losses stay under 3W with proper thermal via arrays under the exposed pad. The Infineon XDPP1140100BXUMA1 USB PD controller complements this FET for a fully Infineon USB PD solution.
Recommended
1S-3S Li-ion Battery Protection
As a low-side protection FET in 1S to 3S Li-ion battery management systems, the ISZ056N03LF2SATMA1's 30V VDS handles the maximum 12.6V battery stack with substantial margin for inductive transients. The 72A continuous current rating comfortably supports 10A continuous discharge paths in power tools and e-bikes. The 5.6 mOhm RDS(on) introduces less than 60 mV drop at 10A discharge, minimizing parasitic loss. The PG-TSDSON-8 package is small enough to fit on a 20 mm x 30 mm BMS PCB. During overcurrent events, the low Qg enables fast turn-off (under 100 ns) to protect downstream components. The part's 175C max junction temperature supports hot environments like battery compartments. Pair with the TLE9180D31QKXUMA1 battery management IC for full cell balancing and protection.
Recommended
Industrial 24V Bus Switch
For industrial 24V bus switching, sensor power gating, and load shedding in PLC and IO modules, the ISZ056N03LF2SATMA1's rugged StrongIRFET 2 technology provides the avalanche energy and SOA margin required for repetitive switching of inductive loads. The 30V VDS handles 24V nominal bus with 25% transient margin, and the 5.6 mOhm RDS(on) minimizes voltage drop on long cable runs. The PG-TSDSON-8 package supports automated optical inspection and standard reflow profiles, reducing manufacturing cost. Industrial ambient temperatures from -40C to +85C are well within the device's -55C to +175C operating range. The device is fully lead-free and RoHS compliant, meeting industrial environmental standards. Use the 1ED3125MU12FXUMA1 galvanically-isolated gate driver for safe high-side switching.
Recommended
Recommended Products Summary
Engineering reference data for ISZ056N03LF2SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISZ033N03LF2SATMA1 | ISC028N03LF2SATMA1 | BSC0921NDIATMA1 | BSZ0901NSIATMA1 | BSZ0501NSIATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8 | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 60 V |
| RDS(on) max at VGS=10V | 5.6 mOhm | 3.3 mOhm | 2.8 mOhm | 2.1 mOhm | 9.0 mOhm | 5.0 mOhm | 1.5 mOhm |
| Technology Family | StrongIRFET 2 | StrongIRFET 2 | StrongIRFET 2 | OptiMOS | OptiMOS | OptiMOS | OptiMOS 5 |
Key Differentiators
- Infineon StrongIRFET 2 technology with proven ruggedness (vs BSZ0901NSIATMA1 (OptiMOS))
- 5.6 mOhm in compact 3.3x3.3 mm PQFN (vs BSC0921NDIATMA1 (OptiMOS, 2.1 mOhm))
- Same StrongIRFET 2 family as ISZ033N03LF2SATMA1 (vs ISZ033N03LF2SATMA1)
Design Notes
Estimated: at Tc=100C and ID=30A, conduction loss is approximately 5.0W (I^2 x RDS(on) = 30^2 x 5.6 mOhm). The PG-TSDSON-8 exposed drain pad requires at least 50 mm^2 of copper pour on the top layer plus an array of thermal vias (12-16 vias, 0.3mm drill) to the inner ground plane to keep junction temperature below 125C in ambient 60C environments. The 3W Ta rating applies to a standard 1 oz FR4 test board; production boards with thicker copper or inner plane layers can substantially improve dissipation.
Minimize the high-current loop area by placing input capacitors and the synchronous FET as close as possible to the drain and source pins. Keep the gate-drive loop area below 10 mm^2 by routing gate and return traces directly above each other. Use a 10 Ohm gate resistor to limit ringing; gate-drive traces should be 0.25 mm width minimum with the return path on an adjacent inner layer. The exposed drain pad must be soldered to a copper land of at least 3.0 mm x 3.0 mm with via-in-pad recommended for best thermal performance.
Do not exceed the absolute maximum gate-source voltage. Standard 10V VGS is safe; if your gate driver produces 12V, add a 10V zener clamp from gate to source. Ensure the controller's dead-time matches the FET's reverse recovery characteristics to prevent shoot-through. Never operate the part above 175C junction; calculate Tj = Ta + (PD x theta_JA) under worst-case load. In hot-swap applications, verify inrush energy stays within the SOA curve at the maximum expected ambient temperature.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - choose IAUZ18N10S5L420ATMA1 or similar automotive-grade parts for automotive applications. COO: China per RS-Online statement of conformity.
