ITS716GFUMA1 vs ITS724GFUMA1 Comparison

Detailed side-by-side comparison of ITS716GFUMA1 by Infineon and ITS724GFUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ITS716GFUMA1 ITS724GFUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Smart High-Side Power Switch —
Number of Channels 4 4
Output Configuration High-side (N-Channel MOSFET) —
Continuous Current per Channel 2.3 A —
On-State Resistance (RON) per Channel [DATA_NEEDED: Ron typical value] —
Operating Voltage Range (Vbb) 5 V to 36 V —
Load Dump Tolerance Up to 45 V —
Standby Current [DATA_NEEDED: Iq standby typical] —
Input Logic Levels CMOS/TTL compatible, parallel interface —
Diagnostic Output Open-drain fault flag, one per channel Open-drain status flag
Protection Features Overload, short-circuit, over-temperature, over-voltage, ESD —
PWM Capability Up to 1 kHz —
Operating Temperature Range -40 C to +85 C (industrial grade) -40 C to +85 C (industrial)
Package PG-DSO-20-32 (20-pin SOIC, exposed pad) PG-DSO-20-32
Thermal Resistance, Junction-to-Ambient [DATA_NEEDED: theta_JA value] —
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Part Series — ITS724G / PROFET Industrial
Function — 4-Channel Smart High-Side Power Switch
Topology — High-Side N-Channel MOSFET with charge pump
Continuous Output Current per Channel — 3.3 A
On-State Resistance (typ) — 65 mΩ per channel
Supply Voltage Range (Vbb) — -10 V to 16 V
Load Dump Protection — External resistor required
Input Compatibility — CMOS-compatible, ground-referenced
Technology — Smart SIPMOS (vertical MOSFET with charge pump)

Datasheets & Resources

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