K4A8G045WB-BCPB vs K4A8G085WB-BCRC Comparison

Detailed side-by-side comparison of K4A8G045WB-BCPB by Samsung Electronics and K4A8G085WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G045WB-BCPB

K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung

K4A8G045WB-BCPB βœ“ Active
Samsung Electronics
K4A8G085WB-BCRC

K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung

K4A8G085WB-BCRC βœ“ Active

Specification Comparison

Parameter K4A8G045WB-BCPB K4A8G085WB-BCRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.10 $6.80
Memory Type DDR4 SDRAM (B-die) DDR4 SDRAM
Density 8 Gb 8 Gb
Organization 2G x 4 1G x 8
Data Rate 2133 Mbps/pin (PC4-2133) 2400 Mbps
Supply Voltage (VDD) 1.2 V β€”
Package 78-ball FBGA 78-ball FBGA
Mounting Type Surface Mount β€”
Prefetch Architecture 8n β€”
Burst Length BL8, BC4 (burst chop) 8 and 4
Refresh Cycles 8192 8192
Refresh Modes Auto-refresh, Self-refresh β€”
Termination On-Die Termination (ODT) β€”
Reset Asynchronous Reset β€”
Clocking Differential clocks (CK/CK#) β€”
Operating Temperature 0C to +85C 0Β°C to 85Β°C
Max Supply Current 211.7 mA β€”
Features Posted CAS, Programmable CWL, Internal (Self) Calibration β€”
RoHS Status [DATA_NEEDED: RoHS status] β€”
Supply Voltage β€” 1.2 V
Number of Terminals β€” 78
Access Time β€” 0.175 ns
Technology β€” CMOS
On-Die Termination β€” Yes
Auto-Refresh β€” Yes
Self-Refresh β€” Yes
RoHS β€” Compliant

Datasheets & Resources

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