K4A8G085WB-BCPB vs K4A8G085WC-BIWE Comparison

Detailed side-by-side comparison of K4A8G085WB-BCPB by Samsung Electronics and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WB-BCPB K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB βœ“ Active
Samsung Electronics
K4A8G085WC-BIWE

K4A8G085WC-BIWE - 8Gb DDR4-3200 1Gx8 DRAM | Samsung

K4A8G085WC-BIWE βœ“ Active

Specification Comparison

Parameter K4A8G085WB-BCPB K4A8G085WC-BIWE
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.28 $6.29
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
Organization 1G x 8 1G x 8
Supply Voltage 1.2 V (nominal) β€”
Data Rate 3200 Mbps (PC4-25600) 3200 Mbps
Speed Grade BC β€”
CAS Latency (CL) 22 β€”
Burst Length 8 8 (BL8), 4 (BC4)
Bank Architecture 16 banks (4 bank groups) β€”
Refresh Interval 7.8 us (up to 85C) β€”
Interface Type SSTL-12 β€”
Termination ODT / dynamic ODT β€”
Self-Refresh Temperature-Compensated Self-Refresh (TCSR) β€”
Package 78-ball FBGA 78-FBGA
Package Dimensions 11 mm x 11 mm β€”
Mounting Type Surface Mount (BGA) Surface Mount
Operating Mode DLL enabled β€”
RoHS Status Compliant Compliant
Supply Voltage (VDD) β€” 1.2 V
Supply Voltage (VDDQ) β€” 1.2 V
Operating Temperature Range β€” -40Β°C to +95Β°C
Interface β€” POD-12
CAS Latency β€” 22 (CL22)
Refresh β€” Auto-refresh, self-refresh
Lead-Free β€” Yes

Datasheets & Resources

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