K4A8G085WB-BIRC vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of K4A8G085WB-BIRC by Samsung Electronics and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BIRC
K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G085WB-BIRC β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BIRC | H5AN8G6NDJR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.15 | $35.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 512M x 16 |
| Data Rate | 2400 Mbps | 3200 Mbps (DDR4-3200) |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | -40Β°C to 95Β°C | β |
| Package | 78-FBGA | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 78 | 96 |
| Refresh Cycles | 8192 | β |
| Die Family | B-die | β |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 22 cycles (at 3200 Mbps) |
| Burst Length | 8, 16 | 8 (BL8), 4 (BC4) |
| Interface | SSTL-12 | β |
| RoHS | Compliant | Compliant |
| Mounting Type | Surface Mount | β |
| Maximum Supply Voltage (Vsup) | β | 1.26 V |
| Maximum Operating Temperature | β | 85 Β°C |
| Access Mode | β | Multi Bank Page Burst |
| JESD-30 Code | β | R-PBGA-B96 |
| Features | β | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |