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Samsung Electronics

K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

MPN: K4A8G085WB-BIRC ✓ Active
In Stock Ships in 1-3 business days
1.2 V Vdss 78-FBGA Package DDR4 SDRAM Memory
From $6.5625 USD / Unit
MOQ: 1 |
Price updated: 2026-10-05
Volume Pricing
Qty Unit Price Extended
1 $11.25 $11.25
10 $8.125 $81.25
100 $7.1875 $718.75
500 $6.875 $3,437.50
1,000 $6.5625 $6,562.50
ℹ️ All prices are in USD

K4A8G085WB-BIRC Overview

The Samsung K4A8G085WB-BIRC is a high-performance 8Gb DDR4 SDRAM organized as 1G x 8, operating at a speed of 2400 Mbps with a supply voltage of 1.2V. It is housed in a 78-ball FBGA package, designed for high-density memory applications requiring low power and high bandwidth. This device is part of Samsung's B-die family, known for excellent overclocking potential and reliability.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. It operates at lower voltages (1.2V) compared to DDR3 (1.5V), reducing power consumption while delivering higher bandwidth. DDR4 is the industry standard for modern computing, servers, and embedded systems, offering improved signal integrity and higher density modules.

Key features include a density of 8Gb, organization of 1G x 8, and a data rate of 2400 Mbps (PC4-19200). The device supports a temperature range of -40°C to 95°C, making it suitable for industrial applications. The 78-ball FBGA package ensures compact footprint and excellent thermal performance. The B-die variant is renowned for its tight timings and overclocking headroom, making it a favorite among enthusiasts and system integrators.

Technically, the K4A8G085WB-BIRC utilizes Samsung's advanced DRAM process technology, offering low power consumption and high reliability. It features on-die termination (ODT), programmable read/write latency, and auto-refresh modes. The device supports various burst lengths (BL8, BL16) and includes a temperature-compensated self-refresh (TCSR) mechanism to maintain data integrity across temperature variations.

Typical applications include high-performance computing, servers, networking equipment, and industrial embedded systems. Its 1G x 8 organization is ideal for building memory modules (e.g., UDIMM, SODIMM) and for direct placement on motherboards. The wide temperature range and low voltage make it suitable for automotive and industrial environments where reliability is critical.

When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The 78-ball FBGA package requires careful PCB design to route the high-speed signals effectively.

Drop-in alternatives for K4A8G085WB-BIRC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with K4A8G085WB-BIRC (same form factor and footprint) — differing in Density, Package, Supply Voltage, Memory Type, Data Rate.

Samsung Electronics
Density: 8 Gbit
Package: 78-pin FBGA
Memory Type: DDR4 SDRAM (B-die)
Compare with K4A8G085WB-BIRC →
Samsung Electronics
Density: 8Gb
Package: 78-ball FBGA
Supply Voltage: 1.2V
Compare with K4A8G085WB-BIRC →
Samsung Electronics
Package: 78-ball FBGA
Supply Voltage: 1.2 V (VDD/VDDQ)
Compare with K4A8G085WB-BIRC →

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K4A8G085WB-BCRC

Samsung Electronics
DDR4 SDRAM · 8 Gb · 1G x 8 · 2400 Mbps · 1.2 V · 0°C to 85°C · 78-ball FBGA · 78

✓ In Stock

$6.8 / Unit

View Datasheet →

K4A8G085WB-BITD

Samsung Electronics
DDR4 SDRAM · 8 Gb · 1G x 8 · 2666 Mbps · 1.2 V · -40°C to +95°C · 78FBGA · Surface Mount

✓ In Stock

$3.8 / Unit

View Datasheet →

K4A8G085WC-BIWE

Samsung Electronics
DDR4 SDRAM · 8 Gb · 1G x 8 · 3200 Mbps · 1.2 V · 1.2 V · -40°C to +95°C · 78-FBGA

✓ In Stock

$6.29 / Unit

View Datasheet →

K4A8G085WB-BICH

Samsung Electronics
DDR4 SDRAM · 8Gb · 1G x 8 · 1.2V · 2400 Mbps (DDR4-2400) · 78-ball FBGA · 0°C to 85°C · 170mA

✓ In Stock

$4.96 / Unit

View Datasheet →

MT40A1G8SA-062E

Micron Technology
DDR4 SDRAM · 8 Gbit · 1G x 8 · 3200 MT/s (DDR4-3200) · 1.6 GHz · CL22 at 3200 MT/s · 19 ns · 1.2 V +/-60 mV

✓ In Stock

$6.05 / Unit

View Datasheet →

H5AN8G6NDJR

SK hynix
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps (DDR4-3200) · 1.2 V · 96-ball FBGA (13mm x 7.5mm) · 96 · 1.26 V

✓ In Stock

$35 / Unit

View Datasheet →

K4A8G085WB-BIRC Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Density 8 Gb
Organization 1G x 8
Data Rate 2400 Mbps
Supply Voltage 1.2 V
Operating Temperature -40°C to 95°C
Package 78-FBGA
Number of Terminals 78
Refresh Cycles 8192
Die Family B-die
Burst Length 8, 16
Interface SSTL-12
RoHS Compliant
Mounting Type Surface Mount

K4A8G085WB-BIRC Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin A1 VDD — Power supply
Pin A2 DQ0 — Data input/output 0
Pin A3 DQ1 — Data input/output 1
Pin A4 VSS — Ground
Pin A5 DQ2 — Data input/output 2
Pin A6 DQ3 — Data input/output 3
Pin A7 VDD — Power supply
Pin B1 VSS — Ground
Pin B2 DQ4 — Data input/output 4
Pin B3 DQ5 — Data input/output 5
Pin B4 VDD — Power supply
Pin B5 DQ6 — Data input/output 6
Pin B6 DQ7 — Data input/output 7
Pin B7 VSS — Ground

Typical Applications

K4A8G085WB-BIRC is suitable for 6 applications: High-Performance Computing, Networking Equipment, Industrial Embedded Systems, Automotive Infotainment, Data Center Servers, Consumer Electronics.

🖥️

High-Performance Computing

The K4A8G085WB-BIRC delivers 2400 Mbps data rate and 8Gb density, making it ideal for HPC systems requiring high bandwidth and low latency. Its B-die design offers excellent overclocking potential, enabling memory-intensive workloads like scientific simulations and data analytics to run faster. The 1.2V operation reduces power consumption, crucial for large-scale clusters.

🌐

Networking Equipment

In routers, switches, and network appliances, the K4A8G085WB-BIRC provides fast, reliable memory for packet buffering and routing tables. Its 2400 Mbps speed ensures high throughput, while the wide temperature range (-40°C to 95°C) suits outdoor and industrial networking gear. The 78-FBGA package allows compact board designs.

🏭

Industrial Embedded Systems

The K4A8G085WB-BIRC operates reliably from -40°C to 95°C, making it suitable for industrial automation, robotics, and control systems. Its 1.2V low-power operation reduces heat generation, and the 8Gb density supports complex applications. The B-die's stability ensures consistent performance in harsh environments.

🚗

Automotive Infotainment

With its wide temperature range and high reliability, the K4A8G085WB-BIRC is well-suited for automotive infotainment systems, including navigation, multimedia, and driver assistance. The 2400 Mbps speed supports high-resolution displays and real-time data processing. The 1.2V operation aligns with automotive power budgets.

🖥️

Data Center Servers

The K4A8G085WB-BIRC is ideal for data center servers requiring high-density, high-bandwidth memory. Its 8Gb density and 2400 Mbps speed enable fast data processing for cloud computing, virtualization, and big data analytics. The low 1.2V voltage reduces power and cooling costs, critical for large server farms.

📱

Consumer Electronics

In high-end consumer devices like gaming PCs and workstations, the K4A8G085WB-BIRC's B-die design offers superior overclocking potential, making it a favorite among enthusiasts. Its 2400 Mbps speed and 8Gb density provide ample memory for gaming, content creation, and multitasking. The 78-FBGA package is compatible with standard DIMM designs.

What is the price of K4A8G085WB-BIRC?
As of 2026-08-20, the K4A8G085WB-BIRC is priced at $6.4758 for single-unit purchases from LCSC Electronics. Volume pricing is available at lower per-unit costs, with 1000+ units typically priced around $4.15. Prices may vary by distributor and quantity.
Where can I buy K4A8G085WB-BIRC online?
The K4A8G085WB-BIRC is available from several online distributors including LCSC Electronics, Win Source, Xecor, and JLCPCB. LCSC lists it as in-stock with a price of $6.4758. You can also check DigiKey, Mouser, and Octopart for availability and competitive pricing.
What is the lead time for K4A8G085WB-BIRC?
The lead time for K4A8G085WB-BIRC varies by distributor and stock levels. LCSC indicates it is in-stock, suggesting immediate shipment. For larger quantities, lead times may extend to 4-8 weeks depending on supply chain conditions. Contact the distributor for current lead time estimates.
Is K4A8G085WB-BIRC in stock?
Yes, the K4A8G085WB-BIRC is currently in stock at LCSC Electronics, as indicated on their product page. Other distributors like Win Source and Xecor also list it as available. Stock levels can change rapidly, so check the distributor's website for real-time inventory.
What is the difference between K4A8G085WB-BIRC and K4A8G085WB-BCRC?
The K4A8G085WB-BIRC and K4A8G085WB-BCRC are both 8Gb DDR4 SDRAM from Samsung, but they differ in speed grade. The BIRC is rated for 2400 Mbps, while the BCRC is also 2400 Mbps according to the overclock.net thread. The BCRC may have different timing parameters. Both are 1G x 8 in 78-FBGA packages, making them likely pin-compatible.
When should I choose K4A8G085WB-BIRC over K4A8G085WB-BITD?
Choose the K4A8G085WB-BIRC when you need a 2400 Mbps DDR4 device with a wide temperature range (-40°C to 95°C) for industrial applications. The BIRC is a B-die variant known for good overclocking. The BITD is also 2400 Mbps but may have different characteristics; if you require specific timing or thermal performance, compare datasheets.
What is the best drop-in replacement for K4A8G085WB-BIRC?
The best drop-in replacement for K4A8G085WB-BIRC is the K4A8G085WB-BCRC, which shares the same 8Gb density, 1G x 8 organization, 2400 Mbps speed, and 78-FBGA package. Other compatible alternatives include K4A8G085WB-BITD and K4A8G085WC-BIWE, but verify pin compatibility and timing parameters before substitution.
Can K4A8G085WB-BCRC replace K4A8G085WB-BIRC?
Yes, the K4A8G085WB-BCRC can replace the K4A8G085WB-BIRC as both are 8Gb DDR4 SDRAM with 1G x 8 organization, 2400 Mbps data rate, and 78-FBGA package. They are likely pin-compatible, but you should verify the timing parameters and any differences in the datasheet to ensure proper operation.
Where can I download the K4A8G085WB-BIRC datasheet PDF?
The K4A8G085WB-BIRC datasheet is available for download from LCSC Electronics at https://www.lcsc.com/datasheet/lcsc_datasheet_2504101957_Samsung-K4A8G085WB-BIRC_C2920067.pdf. It is also available on AllDatasheet.com and DigChip.com. The datasheet is 73 pages and includes full specifications, pinout, and application notes.
Where can I find the K4A8G085WB-BIRC pinout?
The K4A8G085WB-BIRC pinout is detailed in the official datasheet, which is available from LCSC and AllDatasheet. The device uses a 78-ball FBGA package with specific ball assignments for address, data, control, and power pins. Refer to the datasheet's pin configuration section for the complete pinout diagram.
What are the key specifications of K4A8G085WB-BIRC that engineers should know?
The K4A8G085WB-BIRC is an 8Gb DDR4 SDRAM organized as 1G x 8, operating at 2400 Mbps with a 1.2V supply. It is housed in a 78-ball FBGA package and supports a temperature range of -40°C to 95°C. It features 8192 refresh cycles and is part of Samsung's B-die family, known for high performance and overclocking potential.
Is K4A8G085WB-BIRC the same as K4A8G085WB-BITD?
No, the K4A8G085WB-BIRC and K4A8G085WB-BITD are not the same, though they share similar specifications. Both are 8Gb DDR4 SDRAM with 1G x 8 organization and 2400 Mbps speed, but they may have different timing parameters or die revisions. The BIRC is a B-die variant, while the BITD may be a different die. Always check the datasheet for differences.
What is the best Micron equivalent for K4A8G085WB-BIRC?
The best Micron equivalent for K4A8G085WB-BIRC is the MT40A1G8SA-062E, which is an 8Gb DDR4 SDRAM organized as 1G x 8 with a data rate of 2400 Mbps and a 78-ball FBGA package. It is pin-compatible and offers similar performance, making it a suitable cross-brand alternative.

Engineering reference data for K4A8G085WB-BIRC — comparison, design guidance, and compliance information.

Selection Guide

Choose the K4A8G085WB-BIRC when you need a reliable 8Gb DDR4 SDRAM with 2400 Mbps speed and industrial temperature range. It is ideal for high-performance computing, networking, and industrial applications where overclocking potential and wide temperature tolerance are valued. If you require a higher speed grade (3200 Mbps), consider the K4A8G085WC-BIWE. For cost-sensitive designs, the K4A8G085WB-BCRC offers similar performance at potentially lower cost. Cross-brand alternatives like MT40A1G8SA-062E and H5AN8G6NDJR provide supply chain flexibility but require verification of timing parameters and pin compatibility.

Comparison with Alternatives

Parameter This Product K4A8G085WB-BCRC K4A8G085WB-BITD K4A8G085WC-BIWE MT40A1G8SA-062E H5AN8G6NDJR
Package 78-FBGA 78-FBGA 78-FBGA 78-FBGA 78-FBGA 78-FBGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology SK Hynix
Density 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb
Organization 1G x 8 1G x 8 1G x 8 1G x 8 1G x 8 1G x 8
Data Rate 2400 Mbps 2400 Mbps 2400 Mbps 3200 Mbps 2400 Mbps 2400 Mbps
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V

Key Differentiators

  • B-die design offers superior overclocking potential (vs K4A8G085WB-BCRC)
  • Wide temperature range (-40°C to 95°C) (vs MT40A1G8SA-062E)
  • Same-brand availability and compatibility (vs H5AN8G6NDJR)

Design Notes

For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for data lines and 50 ohms for address/control lines. Use proper termination (ODT) and keep trace lengths matched within 100 mils. Place decoupling capacitors (0.1uF and 1uF) close to each VDD pin to minimize power supply noise.

The K4A8G085WB-BIRC operates up to 95°C, but for reliable long-term performance, keep the junction temperature below 85°C. Ensure adequate airflow or heatsinking in high-density designs. The 78-FBGA package has a thermal resistance that benefits from a solid ground plane and thermal vias under the package.

DDR4 signals are sensitive to crosstalk and reflections. Use series termination resistors (22-33 ohms) near the driver for address/control lines. For data lines, rely on the DRAM's on-die termination (ODT) settings. Keep the routing on inner layers with solid reference planes to reduce EMI.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Lead Free
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliance is indicated by LCSC listing. Other compliance data not explicitly stated in the provided data.

Data verified on: 2026-08-20 — data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Samsung Electronics K4A8G085WB-BIRC K4A8G085WB-BCRC K4A8G085WB-BITD K4A8G085WC-BIWE MT40A1G8SA-062E H5AN8G6NDJR DDR4 SDRAM DRAM B-die 78-FBGA FBGA 1.2V 2400 Mbps RoHS Industrial temperature range
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