K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
MPN: K4A8G085WB-BIRC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.48 | $6.48 |
| 10 | $5.83 | $58.30 |
| 100 | $5.18 | $518.00 |
| 500 | $4.66 | $2,330.00 |
| 1,000 | $4.15 | $4,150.00 |
Drop-in alternatives for K4A8G085WB-BIRC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K4A8G085WB-BCRC
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View Datasheet →K4A8G085WC-BIWE
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View Datasheet →MT40A1G8SA-062E
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View Datasheet →K4A8G085WB-BIRC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 1G x 8 |
| Data Rate | 2400 Mbps |
| Supply Voltage | 1.2 V |
| Operating Temperature | -40°C to 95°C |
| Package | 78-FBGA |
| Number of Terminals | 78 |
| Refresh Cycles | 8192 |
| Die Family | B-die |
| CAS Latency | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 16 |
| Interface | SSTL-12 |
| RoHS | Compliant |
| Mounting Type | Surface Mount |
K4A8G085WB-BIRC Pin Configuration
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ4 — Data input/output 4 |
| Pin B3 | DQ5 — Data input/output 5 |
| Pin B4 | VDD — Power supply |
| Pin B5 | DQ6 — Data input/output 6 |
| Pin B6 | DQ7 — Data input/output 7 |
| Pin B7 | VSS — Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G085WB-BIRC is suitable for 6 applications: High-Performance Computing, Networking Equipment, Industrial Embedded Systems, Automotive Infotainment, Data Center Servers, Consumer Electronics.
High-Performance Computing
The K4A8G085WB-BIRC delivers 2400 Mbps data rate and 8Gb density, making it ideal for HPC systems requiring high bandwidth and low latency. Its B-die design offers excellent overclocking potential, enabling memory-intensive workloads like scientific simulations and data analytics to run faster. The 1.2V operation reduces power consumption, crucial for large-scale clusters.
Recommended
Networking Equipment
In routers, switches, and network appliances, the K4A8G085WB-BIRC provides fast, reliable memory for packet buffering and routing tables. Its 2400 Mbps speed ensures high throughput, while the wide temperature range (-40°C to 95°C) suits outdoor and industrial networking gear. The 78-FBGA package allows compact board designs.
Recommended
Industrial Embedded Systems
The K4A8G085WB-BIRC operates reliably from -40°C to 95°C, making it suitable for industrial automation, robotics, and control systems. Its 1.2V low-power operation reduces heat generation, and the 8Gb density supports complex applications. The B-die's stability ensures consistent performance in harsh environments.
Recommended
Automotive Infotainment
With its wide temperature range and high reliability, the K4A8G085WB-BIRC is well-suited for automotive infotainment systems, including navigation, multimedia, and driver assistance. The 2400 Mbps speed supports high-resolution displays and real-time data processing. The 1.2V operation aligns with automotive power budgets.
Recommended
Data Center Servers
The K4A8G085WB-BIRC is ideal for data center servers requiring high-density, high-bandwidth memory. Its 8Gb density and 2400 Mbps speed enable fast data processing for cloud computing, virtualization, and big data analytics. The low 1.2V voltage reduces power and cooling costs, critical for large server farms.
Recommended
Consumer Electronics
In high-end consumer devices like gaming PCs and workstations, the K4A8G085WB-BIRC's B-die design offers superior overclocking potential, making it a favorite among enthusiasts. Its 2400 Mbps speed and 8Gb density provide ample memory for gaming, content creation, and multitasking. The 78-FBGA package is compatible with standard DIMM designs.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G085WB-BIRC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G085WB-BCRC | K4A8G085WB-BITD | K4A8G085WC-BIWE | MT40A1G8SA-062E | H5AN8G6NDJR |
|---|---|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 2400 Mbps | 2400 Mbps | 2400 Mbps | 3200 Mbps | 2400 Mbps | 2400 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | -40°C to 95°C | -40°C to 95°C | -40°C to 95°C | -40°C to 95°C | [DATA_NEEDED] | [DATA_NEEDED] |
| Refresh Cycles | 8192 | 8192 | 8192 | 8192 | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- B-die design offers superior overclocking potential (vs K4A8G085WB-BCRC)
- Wide temperature range (-40°C to 95°C) (vs MT40A1G8SA-062E)
- Same-brand availability and compatibility (vs H5AN8G6NDJR)
Design Notes
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for data lines and 50 ohms for address/control lines. Use proper termination (ODT) and keep trace lengths matched within 100 mils. Place decoupling capacitors (0.1uF and 1uF) close to each VDD pin to minimize power supply noise.
The K4A8G085WB-BIRC operates up to 95°C, but for reliable long-term performance, keep the junction temperature below 85°C. Ensure adequate airflow or heatsinking in high-density designs. The 78-FBGA package has a thermal resistance that benefits from a solid ground plane and thermal vias under the package.
DDR4 signals are sensitive to crosstalk and reflections. Use series termination resistors (22-33 ohms) near the driver for address/control lines. For data lines, rely on the DRAM's on-die termination (ODT) settings. Keep the routing on inner layers with solid reference planes to reduce EMI.
Compliance Information
RoHS compliance is indicated by LCSC listing. Other compliance data not explicitly stated in the provided data.