K4A8G085WB-BIRC vs K4A8G085WC-BIWE Comparison
Detailed side-by-side comparison of K4A8G085WB-BIRC by Samsung Electronics and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BIRC
K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G085WB-BIRC β ActiveSamsung Electronics
K4A8G085WC-BIWE
K4A8G085WC-BIWE - 8Gb DDR4-3200 1Gx8 DRAM | Samsung
K4A8G085WC-BIWE β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BIRC | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.15 | $6.29 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2400 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | β |
| Operating Temperature | -40Β°C to 95Β°C | β |
| Package | 78-FBGA | 78-FBGA |
| Number of Terminals | 78 | β |
| Refresh Cycles | 8192 | β |
| Die Family | B-die | β |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 22 (CL22) |
| Burst Length | 8, 16 | 8 (BL8), 4 (BC4) |
| Interface | SSTL-12 | POD-12 |
| RoHS | Compliant | β |
| Mounting Type | Surface Mount | Surface Mount |
| Supply Voltage (VDD) | β | 1.2 V |
| Supply Voltage (VDDQ) | β | 1.2 V |
| Operating Temperature Range | β | -40Β°C to +95Β°C |
| Refresh | β | Auto-refresh, self-refresh |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |