K4A8G165WB-BCTD vs NT5CC256M16CP-DIB1 Comparison
Detailed side-by-side comparison of K4A8G165WB-BCTD by Samsung Electronics and NT5CC256M16CP-DIB1 by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5CC256M16CP-DIB1
NT5CC256M16CP-DIB1 - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16CP-DIB1 β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCTD | NT5CC256M16CP-DIB1 |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $37.00 | $6.00 |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Organization | 512M x 16 | 256M x 16 |
| Total Density | 8 Gb | β |
| Data Rate | 2666 Mbps/pin (PC4-2666) | 1600Mbps (DDR3L-1600) |
| Supply Voltage | 1.2 V | 1.35V |
| Package | 96-ball FBGA | TFBGA-96, 9x13mm, 0.8mm pitch |
| Operating Temperature | 0Β°C to +95Β°C (TC) | 0C to +95C (Tcase) |
| CAS Latency | [DATA_NEEDED: CL value] | β |
| tRCD | [DATA_NEEDED: tRCD value] | β |
| tRP | [DATA_NEEDED: tRP value] | β |
| Refresh | Auto-refresh, self-refresh | β |
| On-Die Termination | Yes (ODT) | β |
| ZQ Calibration | Yes | β |
| Data Mask | Yes | β |
| RoHS | Compliant | Compliant |
| Density | β | 4Gb |
| Number of Banks | β | 8 |
| CAS Latency (CL) | β | 11 |
| Write Latency (CWL) | β | 8 |
| tRCD/tRP | β | 11 |
| Burst Length | β | 8 (BL8) and 4 (BC4) |
| Halogen Free | β | Yes |
| Lead Free | β | Yes |