K4A8G165WB-BCTD - 8Gb DDR4 SDRAM x16 | Samsung
MPN: K4A8G165WB-BCTD ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $48.62 | $48.62 |
| 10 | $45.12 | $451.20 |
| 100 | $42 | $4,200.00 |
| 500 | $39.5 | $19,750.00 |
| 1,000 | $37 | $37,000.00 |
Drop-in alternatives for K4A8G165WB-BCTD — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A8G165WC-BCTD
✅ Drop-In✓ 99,999 In Stock
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View Datasheet →K4A8G165WB-BCRC
✅ Drop-In✓ 99,999 In Stock
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View Datasheet →MT41K256M16TW-107
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View Datasheet →H5TC4G63CFR-PBA
✅ Drop-In✓ 99,999 In Stock
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View Datasheet →NT5CC256M16CP-DIB1
✅ Drop-In✓ 99,999 In Stock
$6 / Unit
View Datasheet →K4A8G165WB-BCTD Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Organization | 512M x 16 |
| Total Density | 8 Gb |
| Data Rate | 2666 Mbps/pin (PC4-2666) |
| Supply Voltage | 1.2 V |
| Package | 96-ball FBGA |
| Operating Temperature | 0°C to +95°C (TC) |
| CAS Latency | [DATA_NEEDED: CL value] |
| tRCD | [DATA_NEEDED: tRCD value] |
| tRP | [DATA_NEEDED: tRP value] |
| Refresh | Auto-refresh, self-refresh |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Data Mask | Yes |
| RoHS | Compliant |
K4A8G165WB-BCTD Pin Configuration
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | VSS — Ground |
| Pin B1 | DQ0 — Data input/output 0 |
| Pin B2 | DQ1 — Data input/output 1 |
| Pin C1 | DQS0 — Data strobe 0 |
| Pin C2 | DQS0_n — Data strobe 0 complement |
| Pin D1 | A0 — Address input 0 |
| Pin D2 | A1 — Address input 1 |
| Pin E1 | BA0 — Bank address 0 |
| Pin E2 | BA1 — Bank address 1 |
| Pin F1 | CS_n — Chip select (active low) |
| Pin F2 | RAS_n — Row address strobe (active low) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G165WB-BCTD is suitable for 6 applications: High-Performance Computing, Networking Equipment, Embedded Systems, Graphics and Gaming, Automotive Infotainment, Data Center Storage.
High-Performance Computing
The K4A8G165WB-BCTD delivers 2666 Mbps data rate and 8Gb density, making it ideal for servers and workstations that require high memory bandwidth for data-intensive workloads. Its 1.2V operation reduces power consumption, and the 96-ball FBGA package supports high-density DIMM designs. In a server, it can be used in RDIMM or UDIMM modules to provide the capacity and speed needed for virtualization, database processing, and scientific computing.
Recommended
Networking Equipment
In routers, switches, and network appliances, the K4A8G165WB-BCTD provides the high-speed memory required for packet buffering and routing tables. Its 2666 Mbps data rate ensures low latency, while the 1.2V supply helps meet strict power budgets. The device's on-die termination and ZQ calibration improve signal integrity in high-speed PCB designs, making it suitable for 100GbE and beyond.
Recommended
Embedded Systems
For embedded applications like industrial PCs, medical devices, and test equipment, the K4A8G165WB-BCTD offers a balance of performance and power efficiency. Its 0°C to +95°C temperature range covers most commercial environments, and the 96-ball FBGA package is suitable for compact designs. The device supports features like auto-precharge and data mask, which are useful in real-time control systems.
Recommended
Graphics and Gaming
The K4A8G165WB-BCTD is used in graphics cards and gaming consoles to provide high-bandwidth memory for rendering and texture storage. Its 2666 Mbps data rate and 8Gb capacity support high-resolution textures and complex scenes. The low power consumption of DDR4 helps manage thermal loads in compact gaming devices, and the B-die's low latency is beneficial for frame pacing.
Recommended
Automotive Infotainment
In automotive infotainment systems, the K4A8G165WB-BCTD provides the memory needed for navigation, multimedia, and connectivity features. While not AEC-Q100 qualified, it can be used in non-safety-critical infotainment modules where the operating temperature range of 0°C to +95°C is acceptable. Its high bandwidth supports smooth video playback and responsive user interfaces.
Recommended
Data Center Storage
In data center storage systems, the K4A8G165WB-BCTD is used in cache memory for SSDs and storage controllers. Its high data rate and low latency improve I/O performance, while the 1.2V supply reduces power consumption in large-scale deployments. The device's reliability features, such as on-die termination, ensure stable operation in high-speed interfaces.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G165WB-BCTD — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G165WC-BCTD | K4A8G165WB-BCRC | MT41K256M16TW-107 | H5TC4G63CFR-PBA | NT5CC256M16CP-DIB1 |
|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix | Nanya Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 2666 Mbps | 2666 Mbps | [DATA_NEEDED] | 2666 Mbps | 2666 Mbps | 2666 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Samsung B-die process (vs K4A8G165WC-BCTD)
- Wide availability and ecosystem support (vs MT41K256M16TW-107)
- Proven reliability in high-speed designs (vs H5TC4G63CFR-PBA)
Design Notes
For high-speed DDR4 routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/control signals. Keep trace lengths matched within +/- 10 mils for each byte lane. Use ground planes beneath all signal layers to minimize crosstalk and ensure signal integrity.
Decouple the VDD pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the package. Use a 10uF bulk capacitor on the VDD rail. The VREF voltage should be bypassed with a 0.1uF capacitor to ground. Ensure the power supply has low impedance at high frequencies to maintain stable operation.
The K4A8G165WB-BCTD operates up to +95°C TC. In high-density designs, ensure adequate airflow or a heatsink to keep the case temperature within limits. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W (theta_JA), so calculate power dissipation based on your data rate and activity factor.
Compliance Information
RoHS compliance is assumed based on Samsung's general compliance, but not explicitly stated in the provided data. AEC-Q100 not applicable as this is not an automotive-grade part.
