K4A8G165WC-BCTD vs MT40A512M16LY-062E Comparison

Detailed side-by-side comparison of K4A8G165WC-BCTD by Samsung Electronics and MT40A512M16LY-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G165WC-BCTD

K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung

K4A8G165WC-BCTD βœ“ Active
Micron Technology
MT40A512M16LY-062E

MT40A512M16LY-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16LY-062E βœ“ Active

Specification Comparison

Parameter K4A8G165WC-BCTD MT40A512M16LY-062E
Brand Samsung Electronics Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $41.20 $6.65
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb β€”
Organization 512M x 16 512M x 16
Data Rate 2666 Mbps (DDR4-2666) 3200 MT/s
Supply Voltage 1.2 V β€”
Operating Voltage Range 1.14 V to 1.26 V β€”
Clock Frequency 1.333 GHz 1.6 GHz
Operating Temperature 0C to +95C -40C to +95C (IT grade)
Package 96FBGA (96-ball Fine-Pitch Ball Grid Array) 96-ball FBGA (7.5 x 13.5 mm)
Mounting Type Surface Mount Surface Mount
Die Revision C-die β€”
Auto Precharge Yes β€”
Asynchronous Reset Yes β€”
CRC Function Yes β€”
ZQ Calibration Yes (240 ohm resistor to GND) β€”
Dynamic On-Chip Termination (ODT) Yes β€”
Data Mask Function Yes β€”
RoHS Status Compliant Compliant
Memory Size β€” 8 Gbit
Access Time β€” 19 ns
Supply Voltage VDD/VDDQ β€” 1.2 V +/- 60 mV
Supply Voltage VPP β€” 2.5 V (-125 mV, +250 mV)
Bank Architecture β€” 16 banks in 2 groups of 4 (x16)
Refresh β€” 8192-cycle; 64 ms at -40C to +85C, 32 ms >85C to +95C, 16 ms >95C
I/O Interface β€” 1.2 V pseudo open-drain
Features β€” Auto self-refresh, write leveling, dynamic ODT, CRC, data mask, auto precharge, async reset, ZQ calibration, on-die adjustable VREFDQ

Datasheets & Resources

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