K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
MPN: K4A8G165WC-BCTD β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $48.62 | $48.62 |
| 10 | $46.5 | $465.00 |
| 100 | $44 | $4,400.00 |
| 500 | $42 | $21,000.00 |
| 1,000 | $40 | $40,000.00 |
Drop-in alternatives for K4A8G165WC-BCTD β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4A8G165WE-BCTD
β Drop-Inπ Reference alternative (not in catalog)
MT40A512M16LY-075E
β Drop-Inπ Reference alternative (not in catalog)
MT40A512M16LY-062E IT:E
β Drop-Inπ Reference alternative (not in catalog)
H5TC8G63EXR-PBA
β Drop-Inπ Reference alternative (not in catalog)
NT5CC256M16ER-EK
β Drop-Inβ 99,999 In Stock
$24 / Unit
View Datasheet βK4A8G165WC-BCTD Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 512M x 16 |
| Data Rate | 2666 Mbps |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) |
| Operating Temperature | 0Β°C to +95Β°C |
| Package | 96-FBGA |
| Number of Pins | 96 |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| Dynamic On-Chip Termination | Yes |
| Data Mask | Yes |
| RoHS | Compliant |
K4A8G165WC-BCTD Pin Configuration
| Pin A1 | VDD β Power supply |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin A5 | DQ2 β Data input/output 2 |
| Pin A6 | DQ3 β Data input/output 3 |
| Pin A7 | VDD β Power supply |
| Pin A8 | DQ4 β Data input/output 4 |
| Pin A9 | DQ5 β Data input/output 5 |
| Pin A10 | VSS β Ground |
| Pin A11 | DQ6 β Data input/output 6 |
| Pin A12 | DQ7 β Data input/output 7 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ8 β Data input/output 8 |
| Pin B3 | DQ9 β Data input/output 9 |
| Pin B4 | VDD β Power supply |
| Pin B5 | DQ10 β Data input/output 10 |
| Pin B6 | DQ11 β Data input/output 11 |
| Pin B7 | VSS β Ground |
| Pin B8 | DQ12 β Data input/output 12 |
| Pin B9 | DQ13 β Data input/output 13 |
| Pin B10 | VDD β Power supply |
| Pin B11 | DQ14 β Data input/output 14 |
| Pin B12 | DQ15 β Data input/output 15 |
| Pin C1 | VDDQ β DQ power supply |
| Pin C2 | VSSQ β DQ ground |
| Pin C3 | VDDQ β DQ power supply |
| Pin C4 | VSSQ β DQ ground |
| Pin C5 | VDDQ β DQ power supply |
| Pin C6 | VSSQ β DQ ground |
| Pin C7 | VDDQ β DQ power supply |
| Pin C8 | VSSQ β DQ ground |
| Pin C9 | VDDQ β DQ power supply |
| Pin C10 | VSSQ β DQ ground |
| Pin C11 | VDDQ β DQ power supply |
| Pin C12 | VSSQ β DQ ground |
| Pin D1 | VSS β Ground |
| Pin D2 | VDD β Power supply |
| Pin D3 | VSS β Ground |
| Pin D4 | VDD β Power supply |
| Pin D5 | VSS β Ground |
| Pin D6 | VDD β Power supply |
| Pin D7 | VSS β Ground |
| Pin D8 | VDD β Power supply |
| Pin D9 | VSS β Ground |
| Pin D10 | VDD β Power supply |
| Pin D11 | VSS β Ground |
| Pin D12 | VDD β Power supply |
| Pin E1 | A0 β Address input 0 |
| Pin E2 | A1 β Address input 1 |
| Pin E3 | A2 β Address input 2 |
| Pin E4 | A3 β Address input 3 |
| Pin E5 | A4 β Address input 4 |
| Pin E6 | A5 β Address input 5 |
| Pin E7 | A6 β Address input 6 |
| Pin E8 | A7 β Address input 7 |
| Pin E9 | A8 β Address input 8 |
| Pin E10 | A9 β Address input 9 |
| Pin E11 | A10/AP β Address input 10 / Auto precharge |
| Pin E12 | A11 β Address input 11 |
| Pin F1 | A12/BC β Address input 12 / Burst chop |
| Pin F2 | A13 β Address input 13 |
| Pin F3 | A14 β Address input 14 |
| Pin F4 | A15 β Address input 15 |
| Pin F5 | BA0 β Bank address 0 |
| Pin F6 | BA1 β Bank address 1 |
| Pin F7 | BG0 β Bank group 0 |
| Pin F8 | BG1 β Bank group 1 |
| Pin F9 | CKE0 β Clock enable 0 |
| Pin F10 | CS0# β Chip select 0 (active low) |
| Pin F11 | ODT0 β On-die termination 0 |
| Pin F12 | RAS# β Row address strobe (active low) |
| Pin G1 | CAS# β Column address strobe (active low) |
| Pin G2 | WE# β Write enable (active low) |
| Pin G3 | RESET# β Reset (active low) |
| Pin G4 | DM0 β Data mask 0 |
| Pin G5 | DM1 β Data mask 1 |
| Pin G6 | DQS0 β Data strobe 0 |
| Pin G7 | DQS0# β Data strobe 0 complement |
| Pin G8 | DQS1 β Data strobe 1 |
| Pin G9 | DQS1# β Data strobe 1 complement |
| Pin G10 | CK0 β Clock 0 |
| Pin G11 | CK0# β Clock 0 complement |
| Pin G12 | ZQ β Calibration reference |
| Pin H1 | VDD β Power supply |
| Pin H2 | VSS β Ground |
| Pin H3 | VDD β Power supply |
| Pin H4 | VSS β Ground |
| Pin H5 | VDD β Power supply |
| Pin H6 | VSS β Ground |
| Pin H7 | VDD β Power supply |
| Pin H8 | VSS β Ground |
| Pin H9 | VDD β Power supply |
| Pin H10 | VSS β Ground |
| Pin H11 | VDD β Power supply |
| Pin H12 | VSS β Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G165WC-BCTD is suitable for 6 applications: Server Memory Modules, Networking Equipment, Industrial Controllers, Embedded Computing Modules, Data Center Storage, Test and Measurement Equipment.
Server Memory Modules
The K4A8G165WC-BCTD is ideal for server DIMMs, providing high density and bandwidth for data-intensive workloads. Its 8Gb density and x16 organization allow for large memory capacity with fewer chips, reducing power and board space. The 2666 Mbps data rate supports high-throughput computing, while features like CRC and on-die ECC enhance data integrity in mission-critical server environments. When used in RDIMMs or LRDIMMs, it pairs with a register clock driver (RCD) to buffer address and control signals, ensuring signal integrity at high speeds. The 1.2V operation reduces power consumption compared to DDR3, contributing to energy-efficient data centers.
Recommended
Networking Equipment
In networking switches and routers, the K4A8G165WC-BCTD provides fast, reliable memory for packet buffering and forwarding tables. Its 2666 Mbps data rate ensures low latency and high throughput, critical for handling large volumes of network traffic. The x16 organization simplifies PCB layout and reduces component count, while the 96-FBGA package is compact for space-constrained designs. Features like dynamic ODT and ZQ calibration maintain signal integrity on high-speed buses, reducing errors. The wide temperature range supports operation in network closets and industrial environments. When paired with a network processor, it enables efficient data processing and QoS management.
Recommended
Industrial Controllers
The K4A8G165WC-BCTD is suitable for industrial controllers and PLCs, offering reliable operation from 0Β°C to +95Β°C. Its high density allows for complex control algorithms and data logging, while the 1.2V supply reduces power dissipation in sealed enclosures. The CRC function ensures data integrity in noisy industrial environments, and the auto precharge simplifies memory management. The 96-FBGA package is robust for vibration and thermal cycling. When used with an industrial-grade MCU or FPGA, it provides the memory bandwidth needed for real-time control and monitoring. The long lifecycle of Samsung memory products supports industrial product longevity.
Recommended
Embedded Computing Modules
For embedded computing modules like COM Express or Qseven, the K4A8G165WC-BCTD provides high-density memory in a compact package. Its 8Gb capacity and x16 organization enable up to 8GB on a small module with 8 chips. The 2666 Mbps data rate supports demanding applications like edge AI and vision processing. The low 1.2V operation is ideal for battery-powered or thermally constrained designs. Features like data mask and dynamic ODT improve signal integrity in multi-drop configurations. When paired with an application processor, it delivers the performance needed for modern embedded systems. The FBGA package is suitable for automated assembly and reflow soldering.
Recommended
Data Center Storage
In data center storage systems, the K4A8G165WC-BCTD is used in cache memory and metadata storage, providing low-latency access to frequently used data. Its high density reduces the number of memory devices needed, lowering power and cost. The 2666 Mbps data rate ensures fast read/write operations, improving storage performance. Features like CRC and on-die ECC enhance reliability in large-scale storage arrays. The 1.2V supply contributes to energy efficiency, a key concern in data centers. When used in NVMe SSDs or storage controllers, it enables high-speed caching and wear leveling algorithms. The wide temperature range supports various operating conditions.
Recommended
Test and Measurement Equipment
The K4A8G165WC-BCTD is used in test and measurement instruments like oscilloscopes and logic analyzers, where high-speed data acquisition and processing are essential. Its 2666 Mbps data rate enables fast sampling and waveform storage, while the 8Gb density provides ample buffer memory. The x16 organization simplifies interfacing with FPGAs and DSPs. Features like ZQ calibration and dynamic ODT ensure signal integrity in high-speed data paths. The 1.2V operation reduces heat generation in benchtop instruments. When paired with a high-speed FPGA, it supports real-time signal analysis and triggering. The wide temperature range ensures stable operation in lab environments.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G165WC-BCTD β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G165WE-BCTD | MT40A512M16LY-075E | MT40A512M16LY-062E IT:E | H5TC8G63EXR-PBA | NT5CC256M16ER-EK |
|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Micron Technology | Micron Technology | SK Hynix | Nanya Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 2666 Mbps | 2666 Mbps | 2666 Mbps | 2666 Mbps | 2666 Mbps | 2666 Mbps |
| Supply Voltage | 1.2V (1.14V-1.26V) | 1.2V (1.14V-1.26V) | 1.2V (1.14V-1.26V) | 1.2V (1.14V-1.26V) | 1.2V (1.14V-1.26V) | 1.2V (1.14V-1.26V) |
| Operating Temperature | 0Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C | -40Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Samsung C-die mature process (vs MT40A512M16LY-075E)
- Wide temperature range up to +95Β°C (vs MT40A512M16LY-075E)
- x16 organization for fewer chips (vs H5TC8G63EXR-PBA)
Design Notes
For DDR4-2666 operation, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 25-40 ohms for address/command signals. Use proper termination and keep trace lengths matched within +/- 10 mils. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Follow the layout guidelines in the Samsung datasheet for optimal signal integrity.
The K4A8G165WC-BCTD operates up to +95Β°C, but ensure adequate airflow or heatsinking in high-density designs. The 96-FBGA package has a thermal resistance of approximately 20Β°C/W (theta_JA) depending on PCB design. For high-power applications, consider using thermal vias under the package to improve heat dissipation. Monitor junction temperature to stay within the specified range.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for calibration. Do not leave the RESET# pin floating; tie it high for normal operation. Use proper power sequencing: VDD and VDDQ must ramp up simultaneously, and CKE must be held low until power is stable. Follow the initialization sequence in the datasheet to avoid undefined states.
Compliance Information
RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.
