K4A8G165WC-BCWE vs AS4C512M16D4A-62BCN Comparison
Detailed side-by-side comparison of K4A8G165WC-BCWE by Samsung Electronics and AS4C512M16D4A-62BCN by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveAlliance Memory
AS4C512M16D4A-62BCN
AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCN β ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCWE | AS4C512M16D4A-62BCN |
|---|---|---|
| Brand | Samsung Electronics | Alliance Memory |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $38.00 | $7.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 1600 MHz (3200 Mbps) |
| Supply Voltage (VDD) | 1.2 V | β |
| VPP Voltage | 2.5 V | β |
| Operating Temperature Range | 0Β°C to +95Β°C | β |
| Package | 96-FBGA | 96-FBGA (7.5x13 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 18 ns |
| Burst Length | 8 (BL8) / 4 (BC4) | β |
| Number of Banks | 16 | β |
| Row Address Bits | 16 | β |
| Column Address Bits | 10 | β |
| Interface | Differential (CK, /CK) | POD (Pseudo Open Drain) |
| RoHS Status | Compliant | Compliant |
| JEDEC Standard | JEDEC DDR4 | Compliant |
| Memory Size | β | 8 Gbit |
| Supply Voltage | β | 1.2 V |
| Operating Temperature | β | 0Β°C to 95Β°C |
| Refresh | β | Auto-refresh and self-refresh |
| On-Die Termination | β | Yes |
| Packaging | β | Tray |