K4A8G165WC-BCWE vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of K4A8G165WC-BCWE by Samsung Electronics and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCWE | H5AN8G6NDJR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $38.00 | $35.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | β |
| VPP Voltage | 2.5 V | β |
| Operating Temperature Range | 0Β°C to +95Β°C | β |
| Package | 96-FBGA | 96-ball FBGA (13mm x 7.5mm) |
| Mounting Type | Surface Mount | β |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 22 cycles (at 3200 Mbps) |
| Burst Length | 8 (BL8) / 4 (BC4) | 8 (BL8), 4 (BC4) |
| Number of Banks | 16 | β |
| Row Address Bits | 16 | β |
| Column Address Bits | 10 | β |
| Interface | Differential (CK, /CK) | β |
| RoHS Status | Compliant | β |
| JEDEC Standard | JEDEC DDR4 | β |
| Supply Voltage | β | 1.2 V |
| Number of Terminals | β | 96 |
| Maximum Supply Voltage (Vsup) | β | 1.26 V |
| Maximum Operating Temperature | β | 85 Β°C |
| Access Mode | β | Multi Bank Page Burst |
| JESD-30 Code | β | R-PBGA-B96 |
| RoHS | β | Compliant |
| Features | β | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |