K4A8G165WC-BCWE vs MT40A512M16JY-075E Comparison
Detailed side-by-side comparison of K4A8G165WC-BCWE by Samsung Electronics and MT40A512M16JY-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveMicron Technology
MT40A512M16JY-075E
MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-075E β ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCWE | MT40A512M16JY-075E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $38.00 | $30.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 2666 MT/s |
| Supply Voltage (VDD) | 1.2 V | β |
| VPP Voltage | 2.5 V | 2.5V (-125mV, +250mV) |
| Operating Temperature Range | 0Β°C to +95Β°C | 0Β°C to +95Β°C (TC) |
| Package | 96-FBGA | 96-FBGA (8x14) |
| Mounting Type | Surface Mount | Surface Mount |
| CAS Latency | [DATA_NEEDED: CAS Latency] | β |
| Burst Length | 8 (BL8) / 4 (BC4) | β |
| Number of Banks | 16 | β |
| Row Address Bits | 16 | β |
| Column Address Bits | 10 | β |
| Interface | Differential (CK, /CK) | Parallel |
| RoHS Status | Compliant | Compliant |
| JEDEC Standard | JEDEC DDR4 | β |
| Memory Size | β | 8 Gbit |
| Clock Frequency | β | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | β | 1.14V to 1.26V |
| Refresh Time | β | 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C |
| Features | β | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | β | 1.2V pseudo open-drain |