K4A8G165WC-BCWE vs NT5AD512M16C4-JRI Comparison
Detailed side-by-side comparison of K4A8G165WC-BCWE by Samsung Electronics and NT5AD512M16C4-JRI by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveNanya Technology
NT5AD512M16C4-JRI
NT5AD512M16C4-JRI - 8Gb DDR4-3200 SDRAM | Nanya Technology
NT5AD512M16C4-JRI β ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCWE | NT5AD512M16C4-JRI |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $38.00 | $75.58 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | β |
| VPP Voltage | 2.5 V | β |
| Operating Temperature Range | 0Β°C to +95Β°C | -40Β°C to +95Β°C |
| Package | 96-FBGA | TFBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| CAS Latency | [DATA_NEEDED: CAS Latency] | β |
| Burst Length | 8 (BL8) / 4 (BC4) | β |
| Number of Banks | 16 | β |
| Row Address Bits | 16 | β |
| Column Address Bits | 10 | β |
| Interface | Differential (CK, /CK) | β |
| RoHS Status | Compliant | β |
| JEDEC Standard | JEDEC DDR4 | β |
| Memory Density | β | 8 Gbit |
| Supply Voltage | β | 1.2 V |
| Auto Self-Refresh | β | Yes |
| Built-in Temperature Sensor | β | Yes |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| Data Mask | β | Yes |
| Write Leveling | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |
| CRC Function | β | Yes |
| RoHS | β | Compliant |