K4B4G1646D-BCH90 vs K4B4G1646D-BFMA Comparison
Detailed side-by-side comparison of K4B4G1646D-BCH90 by Samsung Electronics and K4B4G1646D-BFMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BCH90
K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCH90 β ActiveSamsung Electronics
K4B4G1646D-BFMA
K4B4G1646D-BFMA - 4Gb DDR3 SDRAM x16 96FBGA | Samsung
K4B4G1646D-BFMA β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BCH90 | K4B4G1646D-BFMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4Gb | 4Gb |
| Organization | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | 8 |
| Data Rate | 2133 Mb/s per pin | 1866 Mbps |
| Supply Voltage | 1.35V (1.283V to 1.45V) | 1.5V |
| Package | 96-ball FBGA | 96-ball FBGA |
| Operating Temperature | 0Β°C to +85Β°C | β |
| CAS Latency | 9-14 clocks (programmable) | Programmable |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (ODT) | Yes |
| ZQ Calibration | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| RoHS Compliant | Yes | β |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | Yes |
| Ball Pitch | β | 0.8mm |
| Temperature Range | β | 0Β°C to 95Β°C (case) |
| RoHS | β | Compliant |