K4B4G1646E-BCMA vs MT41K256M16HA-125 Comparison
Detailed side-by-side comparison of K4B4G1646E-BCMA by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BCMA
K4B4G1646E-BCMA - 4Gb DDR3 SDRAM 1066MHz FBGA-96 | Samsung
K4B4G1646E-BCMA β ActiveMicron Technology
MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125 β ActiveSpecification Comparison
| Parameter | K4B4G1646E-BCMA | MT41K256M16HA-125 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.24 | $6.36 |
| Memory Type | DDR3 SDRAM | SDRAM - DDR3L |
| Density | 4 Gbit | β |
| Organization | 256M x 16 | β |
| Clock / Data Rate | 1066 MHz / 1066 Mbps per data pin | β |
| Supply Voltage | 1.425 V to 1.575 V (1.5 V nominal) | 1.35 V |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Package | FBGA-96 (7.5 x 13.3 mm) | 96-FBGA (9x14 mm) |
| Operating Supply Current (IDD) | 55 mA | β |
| Standby Current | 2 mA | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| On-Die Termination (ODT) | Dynamic ODT supported | β |
| ZQ Calibration | Yes | β |
| Data Mask Function | Yes | β |
| Mounting Type | Surface Mount (BGA) | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Memory Size | β | 4Gbit (256M x 16) |
| Data Bus Width | β | 16 bit |
| Clock Frequency | β | 800 MHz |
| Access Time | β | 13.75 ns |
| Number of Pins | β | 96 |
| Lead-Free | β | Yes |
| Logic Family | β | CMOS |
| Refresh Interval | β | 7.8 us at 85C |
| CAS Latency | β | 11 |