K4B4G1646E-BCNB vs IS43TR16256AL-125KBL Comparison
Detailed side-by-side comparison of K4B4G1646E-BCNB by Samsung Electronics and IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB β ActiveISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL β ActiveSpecification Comparison
| Parameter | K4B4G1646E-BCNB | IS43TR16256AL-125KBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $13.52 | $5.60 |
| Memory Type | DDR3 SDRAM | SDRAM - DDR3L |
| Memory Size | 4 Gb | 4Gbit (256M x 16) |
| Organization | 256M x 16 | β |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35V (backward compatible to 1.5V) |
| Data Rate | 1866 Mbps | 1600 Mbps |
| CAS Latency | [DATA_NEEDED: CAS Latency] | β |
| Operating Temperature | 0C to +95C | 0Β°C ~ 95Β°C |
| Package | 96-ball FBGA | 96-TWBGA (9x13mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Number of Pins | 96 | β |
| Interface Type | Parallel | β |
| Refresh | 8K / 64 ms | β |
| Burst Length | 8, 4 (fixed) | β |
| Write Recovery Time | [DATA_NEEDED: tWR] | β |
| Row Cycle Time | [DATA_NEEDED: tRC] | β |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | β |
| Row Precharge Time | [DATA_NEEDED: tRP] | β |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | β |
| Interface | β | Parallel |
| Clock Frequency | β | 800 MHz |
| Access Time | β | 20 ns |
| Memory Format | β | DRAM |
| Technology | β | SDRAM - DDR3L |
| Lead-Free | β | Yes |
| Number of Terminals | β | 96 |