Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
MPN: K4B4G1646E-BCNB β Active
In Stock (99,999)
Ships in 1-3 business days
1.35 V (low voltage) Vdss
[DATA_NEEDED: IDD0] Id
96-ball FBGA Package
DDR3 SDRAM Memory
$4.5
USD / Unit
MOQ: 1 |
Volume Pricing
| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.5 | $4.50 |
| 10 | $4.2 | $42.00 |
| 100 | $3.8 | $380.00 |
| 500 | $3.5 | $1,750.00 |
| 1,000 | $3.2 | $3,200.00 |
βΉοΈ All prices are in USD
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Request AlternativesK4B4G1646E-BCNB Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3 SDRAM |
| Memory Size | 4 Gb (256M x 16) |
| Data Rate | 1866 Mbps |
| Supply Voltage | 1.35 V (low voltage) |
| Operating Temperature | 0C to +95C |
| Package | 96-ball FBGA |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| CAS Latency | [DATA_NEEDED: CAS Latency] |
| tRCD | [DATA_NEEDED: tRCD] |
| tRP | [DATA_NEEDED: tRP] |
| tRAS | [DATA_NEEDED: tRAS] |
| Refresh | 8K refresh / 64ms |
| Interface | SSTL_15 |
| Burst Length | 8, 4 (fixed) |
| Number of Banks | 8 banks |
| Row Addressing | 16K rows |
| Column Addressing | 1K columns |
| Operating Current (IDD0) | [DATA_NEEDED: IDD0] |
| Standby Current (IDD2N) | [DATA_NEEDED: IDD2N] |
K4B4G1646E-BCNB Pin Configuration
| Pin A1 | VDD β Power supply (1.35V) |
| Pin A2 | DQ0 β Data I/O 0 |
| Pin A3 | DQ1 β Data I/O 1 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ2 β Data I/O 2 |
| Pin B3 | DQ3 β Data I/O 3 |
| Pin C1 | VDDQ β DQ power supply |
| Pin C2 | DQS0 β Data strobe 0 (positive) |
| Pin C3 | DQS0# β Data strobe 0 (negative) |
| Pin D1 | VSS β Ground |
| Pin D2 | CLK β Clock input |
| Pin D3 | CLK# β Complementary clock input |
| Pin E1 | CKE β Clock enable |
| Pin E2 | CS# β Chip select |
| Pin E3 | RAS# β Row address strobe |
| Pin F1 | CAS# β Column address strobe |
| Pin F2 | WE# β Write enable |
| Pin F3 | BA0 β Bank address 0 |
| Pin G1 | BA1 β Bank address 1 |
| Pin G2 | A0 β Address input 0 |
| Pin G3 | A1 β Address input 1 |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4B4G1646E-BCNB is suitable for 3 applications: Embedded Systems, IoT Devices, Industrial Control.
Embedded Systems
Core processing in embedded applications using K4B4G1646E-BCNB.
IoT Devices
Smart connected devices powered by K4B4G1646E-BCNB.
Industrial Control
Automation and control systems using K4B4G1646E-BCNB.
What is the memory size of K4B4G1646E-BCNB?
It is 4 Gb (gigabit), organized as 256M x 16 bits.
What is the supply voltage for this DDR3 SDRAM?
It operates at 1.35V (low voltage DDR3L), compatible with 1.5V DDR3 with VDD=1.35V.
What is the maximum data rate?
The device supports up to 1866 Mbps per pin.
What package does K4B4G1646E-BCNB use?
It comes in a 96-ball FBGA package.
Is this component RoHS compliant?
Yes, it is RoHS compliant.
What is the operating temperature range?
The operating temperature range is 0Β°C to +95Β°C (Tcase).
Can this be used in mobile devices?
Yes, its low voltage (1.35V) makes it suitable for mobile and embedded applications.
What is the difference between DDR3 and DDR3L?
DDR3L operates at 1.35V, while standard DDR3 operates at 1.5V. This device is DDR3L and can also run at 1.5V if needed.
What is the refresh requirement?
It requires 8K refresh cycles every 64ms.
Does it support on-die termination (ODT)?
Yes, DDR3 SDRAMs typically include ODT; however, specific values are not provided in the available data.
What is the burst length supported?
It supports burst lengths of 8 and 4 (fixed).
How many banks does it have?
It has 8 banks.
What is the row and column addressing?
It has 16K rows and 1K columns.
What is the typical application for this memory?
It is used in networking, computing, and embedded systems requiring high-density, low-power memory.
Is there a lead-free option?
The device is RoHS compliant, indicating lead-free construction.
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