K4B4G1646E-BMMA vs IS43TR16256AL-125KBL Comparison
Detailed side-by-side comparison of K4B4G1646E-BMMA by Samsung Electronics and IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BMMA
K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BMMA β ActiveISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL β ActiveSpecification Comparison
| Parameter | K4B4G1646E-BMMA | IS43TR16256AL-125KBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $15.70 | $5.60 |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | β |
| Organization | 256M x 16 | β |
| Data Rate | 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.35 V | 1.35V (backward compatible to 1.5V) |
| Operating Temperature | -40Β°C to +95Β°C | 0Β°C ~ 95Β°C |
| Package | 96-FBGA (9x13 mm) | 96-TWBGA (9x13mm) |
| Number of Banks | 8 | β |
| Interface | Parallel | Parallel |
| Clock Frequency | 800 MHz | 800 MHz |
| CAS Latency | [DATA_NEEDED: CAS Latency] | β |
| Burst Length | 8, 4 (with burst chop) | β |
| On-Die Termination | Yes (Dynamic ODT) | β |
| ZQ Calibration | Yes | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | Yes |
| Memory Size | β | 4Gbit (256M x 16) |
| Access Time | β | 20 ns |
| Mounting Type | β | Surface Mount |
| Memory Format | β | DRAM |
| Technology | β | SDRAM - DDR3L |
| RoHS Status | β | Compliant |
| Number of Terminals | β | 96 |