K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
MPN: K4B4G1646E-BMMA β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $22.06 | $22.06 |
| 10 | $20.5 | $205.00 |
| 100 | $18.9 | $1,890.00 |
| 500 | $17.3 | $8,650.00 |
| 1,000 | $15.7 | $15,700.00 |
Drop-in alternatives for K4B4G1646E-BMMA β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4B4G1646E-BYMA
β Drop-Inβ 99,999 In Stock
$11.5 / Unit
View Datasheet βK4B4G1646E-BYK0
β Drop-Inβ 99,999 In Stock
$1.8 / Unit
View Datasheet βK4B4G1646D-BMK0
β Drop-Inβ 99,999 In Stock
$5.9 / Unit
View Datasheet βMT41K256M16HA-125:E
β Drop-Inβ 99,999 In Stock
$3.1 / Unit
View Datasheet βH5TC4G63AFR-PBA
β Drop-Inβ 99,999 In Stock
$5.9 / Unit
View Datasheet βIS43TR16256AL-125KBL
β Drop-Inβ 99,999 In Stock
$5.9 / Unit
View Datasheet βK4B4G1646E-BMMA Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Density | 4 Gb |
| Organization | 256M x 16 |
| Data Rate | 1600 Mbps |
| Supply Voltage | 1.35 V |
| Operating Temperature | -40Β°C to +95Β°C |
| Package | 96-FBGA (9x13 mm) |
| Number of Banks | 8 |
| Interface | Parallel |
| Clock Frequency | 800 MHz |
| CAS Latency | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination | Yes (Dynamic ODT) |
| ZQ Calibration | Yes |
| RoHS | Compliant |
| Lead-Free | Yes |
K4B4G1646E-BMMA Pin Configuration
| Pin A1 | VDD β Power supply (1.35V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin A5 | DQ2 β Data input/output 2 |
| Pin A6 | DQ3 β Data input/output 3 |
| Pin A7 | VDD β Power supply (1.35V) |
| Pin A8 | DQ4 β Data input/output 4 |
| Pin A9 | DQ5 β Data input/output 5 |
| Pin A10 | VSS β Ground |
| Pin A11 | DQ6 β Data input/output 6 |
| Pin A12 | DQ7 β Data input/output 7 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ8 β Data input/output 8 |
| Pin B3 | DQ9 β Data input/output 9 |
| Pin B4 | VDD β Power supply (1.35V) |
| Pin B5 | DQ10 β Data input/output 10 |
| Pin B6 | DQ11 β Data input/output 11 |
| Pin B7 | VSS β Ground |
| Pin B8 | DQ12 β Data input/output 12 |
| Pin B9 | DQ13 β Data input/output 13 |
| Pin B10 | VDD β Power supply (1.35V) |
| Pin B11 | DQ14 β Data input/output 14 |
| Pin B12 | DQ15 β Data input/output 15 |
| Pin C1 | VDD β Power supply (1.35V) |
| Pin C2 | A0 β Address input 0 |
| Pin C3 | A1 β Address input 1 |
| Pin C4 | A2 β Address input 2 |
| Pin C5 | A3 β Address input 3 |
| Pin C6 | A4 β Address input 4 |
| Pin C7 | A5 β Address input 5 |
| Pin C8 | A6 β Address input 6 |
| Pin C9 | A7 β Address input 7 |
| Pin C10 | A8 β Address input 8 |
| Pin C11 | A9 β Address input 9 |
| Pin C12 | VSS β Ground |
| Pin D1 | VSS β Ground |
| Pin D2 | A10/AP β Address input 10 / Auto precharge |
| Pin D3 | A11 β Address input 11 |
| Pin D4 | A12/BC β Address input 12 / Burst chop |
| Pin D5 | A13 β Address input 13 |
| Pin D6 | A14 β Address input 14 |
| Pin D7 | BA0 β Bank address 0 |
| Pin D8 | BA1 β Bank address 1 |
| Pin D9 | BA2 β Bank address 2 |
| Pin D10 | RAS# β Row address strobe |
| Pin D11 | CAS# β Column address strobe |
| Pin D12 | WE# β Write enable |
| Pin E1 | VDD β Power supply (1.35V) |
| Pin E2 | CS# β Chip select |
| Pin E3 | CKE β Clock enable |
| Pin E4 | ODT β On-die termination |
| Pin E5 | RESET# β Reset |
| Pin E6 | ZQ β ZQ calibration |
| Pin E7 | CK β Clock |
| Pin E8 | CK# β Complementary clock |
| Pin E9 | DM0 β Data mask 0 |
| Pin E10 | DM1 β Data mask 1 |
| Pin E11 | VSS β Ground |
| Pin E12 | VDD β Power supply (1.35V) |
| Pin F1 | VSS β Ground |
| Pin F2 | VDD β Power supply (1.35V) |
| Pin F3 | VSS β Ground |
| Pin F4 | VDD β Power supply (1.35V) |
| Pin F5 | VSS β Ground |
| Pin F6 | VDD β Power supply (1.35V) |
| Pin F7 | VSS β Ground |
| Pin F8 | VDD β Power supply (1.35V) |
| Pin F9 | VSS β Ground |
| Pin F10 | VDD β Power supply (1.35V) |
| Pin F11 | VSS β Ground |
| Pin F12 | VDD β Power supply (1.35V) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4B4G1646E-BMMA is suitable for 6 applications: Industrial Automation, Networking Equipment, Automotive Infotainment, Medical Imaging, High-Performance Computing, Consumer Electronics.
Industrial Automation
The K4B4G1646E-BMMA's wide temperature range (-40Β°C to +95Β°C) and low voltage (1.35V) make it ideal for industrial controllers and PLCs that operate in harsh environments. Its 1600 Mbps data rate ensures fast data processing for real-time control loops. The 4Gb density provides ample memory for complex automation algorithms and data logging. With features like auto precharge and ZQ calibration, it maintains signal integrity in noisy industrial settings, reducing system errors and improving reliability.
Recommended
Networking Equipment
In routers and switches, the K4B4G1646E-BMMA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1600 Mbps data rate and 16-bit interface enable fast data throughput, while the 1.35V operation reduces power consumption in always-on network devices. The 96-FBGA package allows compact board designs, and features like dynamic ODT improve signal integrity at high speeds, ensuring reliable data transmission in demanding network environments.
Recommended
Automotive Infotainment
The K4B4G1646E-BMMA is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity. Its -40Β°C to +95Β°C temperature range meets automotive requirements, and the 1.35V low voltage helps reduce power consumption in vehicles. The 4Gb density supports large maps and media files, while the 1600 Mbps data rate ensures smooth performance. Features like auto precharge and ZQ calibration enhance reliability in the automotive environment.
Recommended
Medical Imaging
In medical imaging devices such as ultrasound and MRI systems, the K4B4G1646E-BMMA provides high-speed memory for image processing and storage. Its 1600 Mbps data rate enables fast data transfer, while the 4Gb density can hold large image frames. The wide temperature range ensures reliable operation in clinical environments. The low voltage operation reduces heat generation, which is critical in sensitive medical equipment. Features like dynamic ODT help maintain signal integrity in high-speed imaging data paths.
Recommended
High-Performance Computing
The K4B4G1646E-BMMA is used in servers and workstations for high-speed data processing. Its 1600 Mbps data rate and 16-bit interface provide high bandwidth for compute-intensive tasks. The 1.35V operation reduces power consumption in data centers, contributing to energy efficiency. The 96-FBGA package allows high-density memory modules, and features like auto precharge and ZQ calibration ensure reliable operation at high speeds. This memory is ideal for applications requiring large memory capacity and fast access times.
Recommended
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, the K4B4G1646E-BMMA provides high-speed memory for multimedia processing and app execution. Its 1600 Mbps data rate ensures smooth video playback and responsive user interfaces. The 1.35V low voltage helps extend battery life in portable devices. The 4Gb density supports multiple applications and media content. Features like dynamic ODT improve signal integrity in compact designs, making it suitable for space-constrained consumer electronics.
Recommended
Recommended Products Summary
Engineering reference data for K4B4G1646E-BMMA β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4B4G1646E-BYMA | K4B4G1646E-BYK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125:E | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung | Samsung | Samsung | Samsung | Micron | SK Hynix | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40Β°C to +95Β°C | -40Β°C to +95Β°C | -40Β°C to +95Β°C | -40Β°C to +95Β°C | 0Β°C to +95Β°C | -40Β°C to +95Β°C | -40Β°C to +95Β°C |
| Die Revision | E-die | E-die | E-die | D-die | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Wide temperature range (-40Β°C to +95Β°C) (vs MT41K256M16HA-125:E)
- E-die process technology (vs K4B4G1646D-BMK0)
- High-speed 1600 Mbps operation (vs IS43TR16256AL-125KBL)
Design Notes
For high-speed DDR3L designs, maintain controlled impedance of 40-60 ohms for data and address lines. Use a 4-layer or more PCB with solid ground plane. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Samsung datasheet to minimize signal integrity issues.
The K4B4G1646E-BMMA operates up to +95Β°C, but ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] Β°C/W. Calculate junction temperature to ensure it stays within the maximum rating. For industrial applications, consider derating if ambient temperature exceeds 85Β°C.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high for normal operation. Verify that the CKE pin is properly controlled during power-up and power-down sequences to avoid data corruption. Also, ensure the supply voltage is within 1.283V to 1.45V as per DDR3L specifications.
Compliance Information
RoHS compliant per LCSC listing. Lead-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
