K4B4G1646E-BMMA vs MT41K256M16HA-125:E Comparison
Detailed side-by-side comparison of K4B4G1646E-BMMA by Samsung Electronics and MT41K256M16HA-125:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BMMA
K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BMMA β ActiveMicron Technology
MT41K256M16HA-125:E
MT41K256M16HA-125:E - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125:E β ActiveSpecification Comparison
| Parameter | K4B4G1646E-BMMA | MT41K256M16HA-125:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $15.70 | $3.10 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | β |
| Supply Voltage | 1.35 V | β |
| Operating Temperature | -40Β°C to +95Β°C | β |
| Package | 96-FBGA (9x13 mm) | 96-FBGA (9x14 mm) |
| Number of Banks | 8 | β |
| Interface | Parallel | β |
| Clock Frequency | 800 MHz | 800 MHz |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 13.75 ns |
| Burst Length | 8, 4 (with burst chop) | β |
| On-Die Termination | Yes (Dynamic ODT) | β |
| ZQ Calibration | Yes | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | Yes |
| Supply Voltage (VDD) | β | 1.35 V (DDR3L) |
| Supply Voltage (VDDQ) | β | 1.35 V |
| Number of Pins | β | 96 |
| Mounting Type | β | Surface Mount |
| Operating Temperature Range | β | 0Β°C to +95Β°C (TC) |
| RoHS Status | β | Compliant |
| Data Bus Width | β | 16 bits |
| Logic Family | β | CMOS |