K9IUGY8J7B-CCK0 vs K9HUGY8J5B-BCK0 Comparison

Detailed side-by-side comparison of K9IUGY8J7B-CCK0 by Samsung Electronics and K9HUGY8J5B-BCK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K9IUGY8J7B-CCK0 K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 ✓ Active
Samsung Electronics
K9HUGY8J5B-BCK0 K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 ✓ Active

Specification Comparison

Parameter K9IUGY8J7B-CCK0 K9HUGY8J5B-BCK0
Brand Samsung Electronics Samsung Electronics
Category EEPROM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.00 $0.00
Memory Density 1 Tb (Tera bit) —
Memory Type NAND Flash, 3D V-NAND TLC NAND Flash (3D V-NAND)
Cell Type TLC (3 bits per cell) [DATA_NEEDED: SLC/MLC/TLC/QLC]
V-NAND Generation V6 (6th generation) —
Process Node / Layer Count 4448-128L (128-layer) —
Manufacturer Samsung Electronics Samsung Electronics
Interface Type [DATA_NEEDED: bus interface type] —
Supply Voltage (VCC) [DATA_NEEDED: VCC voltage] [DATA_NEEDED: VCC range]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ voltage] [DATA_NEEDED: VCCQ range]
Data Bus Width [DATA_NEEDED: data bus width] —
Page Size [DATA_NEEDED: page size] —
Block Size [DATA_NEEDED: block size] —
Program/Erase Cycles [DATA_NEEDED: P/E cycle endurance] —
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Package Type [DATA_NEEDED: exact package code] —
Mounting Type Surface Mount (BGA) Surface Mount
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Product Family — K9HUG (V-NAND flash)
Density — [DATA_NEEDED: device density]
Organization — [DATA_NEEDED: page/block organization]
Bus Width — [DATA_NEEDED: x8 or x16]
Interface — [DATA_NEEDED: asynchronous/toggle DDR]
Page Program Time — [DATA_NEEDED: tPROG]
Page Read Time — [DATA_NEEDED: tR]
Block Erase Time — [DATA_NEEDED: tBERS]
Endurance — [DATA_NEEDED: P/E cycles]
Package — [DATA_NEEDED: package code, e.g. FBGA]

Datasheets & Resources

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