K9PRGY8S7M-CCK0 vs K9HUGY8J5B-BCK0 Comparison
Detailed side-by-side comparison of K9PRGY8S7M-CCK0 by Samsung Electronics and K9HUGY8J5B-BCK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9PRGY8S7M-CCK0 - Samsung NAND Flash Memory BGA | Samsung
K9PRGY8S7M-CCK0 ✓ ActiveSamsung Electronics
K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9HUGY8J5B-BCK0 ✓ ActiveSpecification Comparison
| Parameter | K9PRGY8S7M-CCK0 | K9HUGY8J5B-BCK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | EEPROM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Memory Type | NAND Flash | NAND Flash (3D V-NAND) |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Package | BGA (surface mount) | [DATA_NEEDED: package code, e.g. FBGA] |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Lead free / RoHS compliant | Compliant |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: device density] |
| Memory Bus Width | [DATA_NEEDED: bus width] | — |
| Supply Voltage | [DATA_NEEDED: supply voltage] | — |
| Interface | [DATA_NEEDED: interface type] | [DATA_NEEDED: asynchronous/toggle DDR] |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | — |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Ball Count | [DATA_NEEDED: BGA ball count] | — |
| Product Family | — | K9HUG (V-NAND flash) |
| Cell Type | — | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| Organization | — | [DATA_NEEDED: page/block organization] |
| Bus Width | — | [DATA_NEEDED: x8 or x16] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Page Read Time | — | [DATA_NEEDED: tR] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Endurance | — | [DATA_NEEDED: P/E cycles] |