MPX2010D vs MPX2102D Comparison

Detailed side-by-side comparison of MPX2010D by STMicroelectronics and MPX2102D by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter MPX2010D MPX2102D
Brand STMicroelectronics NXP Semiconductors
Category Pressure Sensors Pressure Sensors
Lifecycle Status Active Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $9.10 $13.10
Pressure Type Differential (Port 1 vs Port 2) Differential
Operating Pressure Range 0 kPa to 10 kPa (0 PSI to 1.45 PSI) —
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] —
Output Type Analog Wheatstone Bridge (mV) Wheatstone Bridge (Analog Voltage)
Output Voltage Span 0 mV to 25 mV at 10V excitation —
Sensitivity 2.5 mV/kPa (nominal, at 10V excitation) —
Excitation Voltage 10 V (typical), 16 V (maximum) —
Linearity 0.1% of full-scale (typical) —
Operating Temperature Range 0 C to +85 C —
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
Package / Case 4-SIP Module (Case 344-15) 4-SIP Module
Mounting Type Through-Hole Through Hole
Number of Pins 4 —
On-Chip Temperature Compensation Yes (laser trimmed) —
Bridge Configuration 4-arm piezoresistive Wheatstone —
RoHS Status [DATA_NEEDED: RoHS status from ST datasheet] —
Sensor Family MPX2010 / MPXV2010G / MPXM2010 —
Diaphragm Type Single monolithic silicon —
Operating Pressure — 14.5 PSI (100 kPa)
Output Voltage — 0 mV to 40 mV (at 10 V supply)
Supply Voltage — 10 V typical
Port Size — Female, 0.136 in (3.4544 mm)
Termination Style — Through-Hole PCB
Applications — Board Mount
Operating Temperature — -40 C to +125 C (per NXP MPX2102 series datasheet)
Compensated Temperature — 0 C to +85 C
Housing / Body Style — Unibody Plastic (Round)
Technology — Piezoresistive Silicon MEMS
Series — MPX2102
Packaging — Tray
Product Status — Obsolete (per distributor listings)

Datasheets & Resources

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