MPXV4006GC7U vs MPVZ5010G7U Comparison

Detailed side-by-side comparison of MPXV4006GC7U by STMicroelectronics and MPVZ5010G7U by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MPVZ5010G7U MPVZ5010G7U - 10 kPa Vented Gauge Pressure Sensor, 8-DIP | NXP

MPVZ5010G7U - 10 kPa Vented Gauge Pressure Sensor, 8-DIP | NXP

MPVZ5010G7U ✓ Active

Specification Comparison

Parameter MPXV4006GC7U MPVZ5010G7U
Brand STMicroelectronics NXP Semiconductors
Category Pressure Sensors Pressure Sensors
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $10.50 $7.25
Operating Pressure Range 0 kPa to 6 kPa 0 kPa to 10 kPa (0 to 1.45 PSI)
Pressure Type Vented Gauge (differential referenced to atmosphere) Vented Gauge
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] —
Output Voltage Span 0.2 V to 4.7 V (typ) —
Output Type Analog ratiometric Analog, ratiometric to Vcc
Supply Voltage 5 V (typ) —
Supply Current [DATA_NEEDED: quiescent current] 10 mA (maximum)
Accuracy (0-85 C) ±1.5 %VFSS (typical) —
Operating Temperature Range [DATA_NEEDED: operating temperature range] 0 °C to +85 °C
Response Time 1 ms (typical) [DATA_NEEDED: response time ms]
Port Style Top-side 3.17 mm (0.13 in) tube inlet —
Output Impedance [DATA_NEEDED: output impedance] —
Package 8-DIP (0.550 in / 13.97 mm), top port 8-DIP Module (Case 1368-01, through-hole)
Pressure Media Compatibility Dry air, non-corrosive gases —
Mounting Type Through-hole (DIP) Through-Hole (DIP module with vent tube)
RoHS Status Compliant (per DigiKey part detail) [DATA_NEEDED: RoHS status]
Lead Free Yes (per NXP/ST product descriptions) —
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Supply Voltage (Vcc) — 4.75 V to 5.25 V (5 V typical)
Analog Output Range — 0.2 V to 4.7 V
Accuracy — ±1.5 %FS (0 °C to 85 °C)
Compensated Temperature Range — -10 °C to +60 °C
Storage Temperature Range — -30 °C to +100 °C [DATA_NEEDED: confirm exact storage spec]
Sensor Technology — Piezoresistive silicon micromachined
Signal Conditioning — On-chip, temperature compensated, calibrated
Body Height — 5.46 mm

Datasheets & Resources

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