MRF6S18100NBR1 vs MRF5S21045NBR1 Comparison
Detailed side-by-side comparison of MRF6S18100NBR1 by NXP Semiconductors and MRF5S21045NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRF6S18100NBR1 | MRF5S21045NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Obsolete | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $68.90 | $25.20 |
| Transistor Type | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application | RF Power Amplifier (GSM/GSM EDGE base station) | W-CDMA base station, TDMA/CDMA, multicarrier amplifier |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | 2.12 GHz |
| Drain-Source Voltage (V(BR)DSS) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Test Drain Current | 900 mA | — |
| Output Power (Pout) | 100 W | — |
| Power Gain (Gps) | 14.5 dB (typical at 1.99 GHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Package / Case | TO-272 WB-4 | — |
| Supplier Device Package | TO-272 WB-4 | TO-272 WB-4 |
| Mounting Type | Surface Mount / Flange Mount | Surface Mount |
| Configuration | Single, common-source | — |
| RoHS Status | Compliant (per NXP product page) | — |
| Operating Mode | Class AB / Class C (per design) | Class AB |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Output Power (Avg) | — | 10 W |
| Power Gain | — | 14.5 dB (typical at 2.12 GHz, 28 V) |
| Drain-Source Voltage (Max Rated) | — | 68 V |
| Test Supply Voltage (Vdd) | — | 28 V |
| Test Current | — | 500 mA |
| Package | — | TO-272 WB-4 (over-molded plastic) |
| Technology | — | Laterally Diffused MOS (LDMOS) |
| Compliance | — | RoHS (status per distributor listing - confirm at order) |
| Manufacturer | — | NXP USA Inc. (formerly Freescale Semiconductor) |