MRFE6S9160HR3 vs MRF6S9130HSR3 Comparison
Detailed side-by-side comparison of MRFE6S9160HR3 by NXP Semiconductors and MRF6S9130HSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ ActiveSpecification Comparison
| Parameter | MRFE6S9160HR3 | MRF6S9130HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $25.20 | $65.00 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Transistor Type | N-Channel Enhancement-Mode Lateral MOSFET | Lateral N-Channel RF Power MOSFET (LDMOS) |
| Technology | HV6E lateral MOSFET (LDMOS-like) | LDMOS (laterally diffused MOS) |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | — |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | [DATA_NEEDED: drain efficiency figure] |
| Package / Case | NI-780H-2L (ceramic/metal air-cavity flange-mount) | NI-780S (CASE 465-06, Style 1) ceramic flange |
| Mounting Type | Chassis / Flange mount (through-hole RF leads) | Chassis / flange mount with screw-down |
| Operating Temperature Range | -40C to +150C (junction) | [DATA_NEEDED: Tj operating range] |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Level | Not applicable (non-SMD air-cavity package) | — |
| Part Status | — | Active |
| Operating Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Max | — | 68 V |
| Drain Current (Id) Max | — | [DATA_NEEDED: maximum pulsed drain current] |
| Typical Quiescent Current (Idq) | — | 950 mA |
| Drain-Source On Resistance (Rds(on)) | — | [DATA_NEEDED: Rds(on) value] |
| Output Power (Pout) Avg | — | 27 W (N-CDMA single-carrier) |
| Power Gain (Gps) | — | 19.2 dB typical |
| Supply Voltage (Vdd) Recommended | — | 28 V |
| Storage Temperature Range | — | [DATA_NEEDED: Tstg range] |
| Pin Count | — | 3 |
| Style | — | Style 1 |
| Packing | — | Tape & Reel (HSR3 suffix) |
| Primary Applications | — | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers |