MRFE6S9160HR3 vs MRFE6S9160HSR3 Comparison
Detailed side-by-side comparison of MRFE6S9160HR3 by NXP Semiconductors and MRFE6S9160HSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRFE6S9160HR3 | MRFE6S9160HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $25.20 | $55.20 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Transistor Type | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Technology | HV6E lateral MOSFET (LDMOS-like) | HV6E (6th gen high-voltage LDMOS) |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | 865 MHz to 960 MHz |
| Test Frequency | 880 MHz | 880 MHz |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | 31% (typical at 35 W avg.) |
| Package / Case | NI-780H-2L (ceramic/metal air-cavity flange-mount) | — |
| Mounting Type | Chassis / Flange mount (through-hole RF leads) | Through-hole / chassis mount with flange |
| Operating Temperature Range | -40C to +150C (junction) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| RoHS Status | Compliant | [DATA_NEEDED: confirm via latest distributor listing] |
| Lead-Free | Yes | — |
| MSL Level | Not applicable (non-SMD air-cavity package) | — |
| Part Number | — | MRFE6S9160HSR3 |
| Drain-Source Voltage (VDSS) | — | 66 V (rated) |
| Drain-Source Breakdown Voltage | — | [DATA_NEEDED: V(BR)DSS minimum] |
| Operating Drain Voltage (VDD) | — | 28 V (typical bias) |
| Continuous Drain Current (ID) | — | 10 uA [leakage spec context, ID max [DATA_NEEDED]] |
| Quiescent Current (IDQ) | — | 1200 mA |
| Output Power (Pout) Avg. | — | 35 W (under N-CDMA drive, 9.8 dB PAR) |
| Output Power Peak | — | 160 W (peak envelope) |
| Power Gain | — | 21 dB (typical at 880 MHz) |
| ACPR at 750 kHz Offset | — | -46.8 dBc |
| Package | — | NI-780S (NI780HS) ceramic, bolted flange |