MT40A512M16HA-083E vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of MT40A512M16HA-083E by Micron Technology and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16HA-083E
MT40A512M16HA-083E - 8Gbit DDR4 SDRAM 512Mx16 | Micron
MT40A512M16HA-083E β Active
Specification Comparison
| Parameter | MT40A512M16HA-083E | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $55.68 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8Gbit | 8 Gb |
| Memory Organization | 512M x 16 | 512M x16 |
| Data Rate | 1.2 GHz (DDR4-2400) | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V Β±60mV | β |
| VPP Supply | 2.5V (-125mV, +250mV) | β |
| Interface | Parallel | β |
| I/O Type | 1.2V pseudo open-drain | β |
| Refresh Time | 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C | β |
| Operating Temperature Range | 0Β°C to +95Β°C (TC) | β |
| Package | 96-FBGA (9x14mm) | FBGA-96 (13x7.5 mm) |
| Mounting Type | Surface Mount | β |
| RoHS Status | Compliant | β |
| Memory Format | DRAM | β |
| Technology | SDRAM - DDR4 | β |
| Supply Voltage (VDD) | β | 1.2 V (max 1.26 V) |
| Number of Terminals | β | 96 |
| Maximum Operating Temperature | β | 85 Β°C |
| Input/Output Type | β | COMMON |
| RoHS | β | Compliant |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Data Mask | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |
| CRC Function | β | Yes |
| Write Leveling | β | Yes |
| Asynchronous Reset | β | Yes |