MT40A512M16HA-083E vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of MT40A512M16HA-083E by Micron Technology and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16HA-083E
MT40A512M16HA-083E - 8Gbit DDR4 SDRAM 512Mx16 | Micron
MT40A512M16HA-083E β ActiveSamsung Electronics
K4A8G165WC-BCRC
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G165WC-BCRC β ActiveSpecification Comparison
| Parameter | MT40A512M16HA-083E | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $23.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8Gbit | β |
| Memory Organization | 512M x 16 | β |
| Data Rate | 1.2 GHz (DDR4-2400) | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V Β±60mV | β |
| VPP Supply | 2.5V (-125mV, +250mV) | β |
| Interface | Parallel | 16-bit I/O |
| I/O Type | 1.2V pseudo open-drain | β |
| Refresh Time | 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C | β |
| Operating Temperature Range | 0Β°C to +95Β°C (TC) | β |
| Package | 96-FBGA (9x14mm) | 96-ball FBGA (9mm x 13mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| Memory Format | DRAM | β |
| Technology | SDRAM - DDR4 | β |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Supply Voltage (VDD) | β | 1.2 V (1.14V to 1.26V) |
| VPP Voltage | β | 2.5 V |
| Operating Temperature | β | 0Β°C to +95Β°C (case) |
| Banks | β | 16 (4 bank groups) |
| Burst Length | β | 8 (BL8) |
| CAS Latency | β | Programmable (e.g., 16, 17, 18) |
| Refresh | β | Temperature-compensated self-refresh (TCSR) |
| RoHS | β | Compliant |