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Samsung Electronics

K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

MPN: K4A8G165WC-BCRC ✓ Active
In Stock Ships in 1-3 business days
1.2 V (1.14V to 1.26V) Vdss 96-ball FBGA (9mm x 13mm) Package DDR4 SDRAM Memory
From $23 USD / Unit
MOQ: 1 |
Price updated: 2026-08-19
Volume Pricing
Qty Unit Price Extended
1 $31.67 $31.67
10 $29.5 $295.00
100 $27.2 $2,720.00
500 $25.1 $12,550.00
1,000 $23 $23,000.00
ℹ️ All prices are in USD

K4A8G165WC-BCRC Overview

The Samsung K4A8G165WC-BCRC is a high-performance 8Gb DDR4 SDRAM organized as 512M x 16, operating at a data rate of 2400 Mbps (PC4-19200) with a 1.2V supply voltage. It is housed in a 96-ball FBGA package, designed for high-bandwidth memory applications in computing, networking, and industrial systems. The device supports a temperature range of 0°C to +95°C (case temperature) and includes features such as auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic on-chip termination (ODT), and data mask.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption by about 25%. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, providing high-speed temporary data storage for active programs and data. It is essential for servers, desktops, laptops, and embedded systems requiring high bandwidth and capacity.

Key features of the K4A8G165WC-BCRC include a 2400 Mbps data rate, 8Gb density, and a 16-bit I/O interface. The device supports a supply voltage range of 1.14V to 1.26V, ensuring compatibility with standard DDR4 power rails. It also features programmable CAS latency, burst length of 8 (BL8), and on-die termination for improved signal integrity. The 96-ball FBGA package (9mm x 13mm) is optimized for space-constrained designs.

Technically, the K4A8G165WC is based on Samsung's C-die process technology, offering improved performance and power efficiency. It includes a temperature-compensated self-refresh (TCSR) feature to reduce power consumption at high temperatures. The device supports a 1.2V VDD and VDDQ, with a separate VPP of 2.5V for wordline boost. The memory array is organized into 16 banks (4 bank groups), enabling higher concurrency and reduced latency.

Typical applications include high-performance computing, servers, networking equipment, industrial controllers, and embedded systems requiring reliable, high-speed memory. The 512M x 16 organization is ideal for systems needing 16-bit wide memory buses, such as SoCs and FPGAs with DDR4 controllers.

When designing with this device, ensure proper decoupling of the VDD and VDDQ rails with 0.1uF and 1uF capacitors, and follow the PCB layout guidelines for DDR4 routing to maintain signal integrity at 2400 Mbps. The device requires a stable 1.2V supply and a 2.5V VPP supply for wordline boost.

Drop-in alternatives for K4A8G165WC-BCRC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with K4A8G165WC-BCRC (same form factor and footprint) — differing in Package, Data Rate, Interface, Operating Temperature, Organization.

ELIXIR/NANYA
Package: TFBGA-96
Data Rate: 3200 MT/s
Operating Temperature: 0C to +95C (TCASE)
Compare with K4A8G165WC-BCRC →
SK hynix
Package: FBGA-96 (96-ball fine-pitch BGA)
Interface: Parallel, synchronous to both clock edges
Operating Temperature: 0C to +95C
Compare with K4A8G165WC-BCRC →
SK hynix
Package: FBGA-96 (13x7.5 mm)
Compare with K4A8G165WC-BCRC →
SK hynix
Package: FBGA-96 (13x7.5 mm)
Data Rate: 3200 Mbps
Compare with K4A8G165WC-BCRC →
SK hynix
Package: 78-ball FBGA
Organization: 1G x 8 (x8)
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Samsung Electronics
Package: 96-ball FBGA (PBGA96)
Data Rate: 2400 Mbps (PC4-19200)
Interface: DDR4 (Double Data Rate, synchronous)
Compare with K4A8G165WC-BCRC →
Samsung Electronics
Package: 96-ball FBGA (PBGA96)
Data Rate: 2400 Mbps/pin (DDR4-2400)
Interface: Parallel (DDR4 SDRAM bus)
Compare with K4A8G165WC-BCRC →
Samsung Electronics
Package: 96-ball FBGA
Data Rate: 2666 Mbps/pin (PC4-2666)
Operating Temperature: 0°C to +95°C (TC)
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Samsung Electronics
Package: 96-ball FBGA (TFBGA)
Data Rate: DDR4-2133 (2133 Mbps/pin)
Interface: DDR4 (16-bit data bus)
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Samsung Electronics
Package: 96FBGA (96-ball Fine-Pitch Ball Grid Array)
Data Rate: 2666 Mbps (DDR4-2666)
Operating Temperature: 0C to +95C
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Samsung Electronics
Package: 96FBGA
Data Rate: 2666 Mbps (DDR4-2666)
Operating Temperature: 0C to +95C
Compare with K4A8G165WC-BCRC →
Samsung Electronics
Package: 96-ball FBGA
Data Rate: 3200 Mbps
Interface: DDR4 (SSTL-12)
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Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K4A8G165WB-BCRC

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR4 SDRAM (DRAM, volatile) · 8 Gb (1 GB) · 512M x 16 · 2400 Mbps (PC4-19200) · 1.2 V (1.14 V to 1.26 V) · CMOS DRAM, Samsung 8Gb B-die · 96-ball FBGA (PBGA96) · 0.8 mm

✓ In Stock

$12.57 / Unit

View Datasheet →

K4A8G165WC-BCTD

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR4 SDRAM · 8 Gb · 512M x 16 · 2666 Mbps (DDR4-2666) · 1.2 V · 1.14 V to 1.26 V · 1.333 GHz · 0C to +95C

✓ In Stock

$41.2 / Unit

View Datasheet →

K4A8G165WB-BCTD

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR4 SDRAM · 512M x 16 · 8 Gb · 2666 Mbps/pin (PC4-2666) · 1.2 V · 96-ball FBGA · 0°C to +95°C (TC)

✓ In Stock

$37 / Unit

View Datasheet →

MT40A512M16JY-07EAIT:B

✅ Drop-In ⚠️ Specs Unverified
Micron Technology
📦 96-ball FBGA
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · 2666 MT/s · 1.2V ±60mV · 2.5V, -125mV, +250mV · Parallel

✓ In Stock

$8.1 / Unit

View Datasheet →

H5AN8G6NDJR-XNC

✅ Drop-In ⚠️ Specs Unverified
SK hynix
📦 96-ball FBGA
DDR4 SDRAM · 8 Gb · 512M x16 · 3200 Mbps · 1.2 V (max 1.26 V) · FBGA-96 (13x7.5 mm) · 96 · 85 °C

✓ In Stock

$55.6818 / Unit

View Datasheet →

NT5AD512M16C4-JR

✅ Drop-In ⚠️ Specs Unverified
Nanya Technology
📦 96-ball FBGA
DDR4 SDRAM · 512M x16 · 8 Gbit · 1.2 V · 1.6 GHz (DDR4-3200) · TFBGA-96 · 0°C to +95°C · 0.023 A (max)

✓ In Stock

$73.75 / Unit

View Datasheet →

K4A8G165WC-BCRC Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Density 8 Gb
Organization 512M x 16
Data Rate 2400 Mbps
Supply Voltage (VDD) 1.2 V (1.14V to 1.26V)
VPP Voltage 2.5 V
Operating Temperature 0°C to +95°C (case)
Package 96-ball FBGA (9mm x 13mm)
Interface 16-bit I/O
Banks 16 (4 bank groups)
Burst Length 8 (BL8)
CAS Latency Programmable (e.g., 16, 17, 18)
Refresh Temperature-compensated self-refresh (TCSR)
RoHS Compliant
Mounting Type Surface Mount

K4A8G165WC-BCRC Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin A1 VDD — Power supply (1.2V)
Pin A2 DQ0 — Data input/output 0
Pin A3 DQ1 — Data input/output 1
Pin A4 VSS — Ground
Pin A5 DQ2 — Data input/output 2
Pin A6 DQ3 — Data input/output 3
Pin A7 VDDQ — I/O power supply (1.2V)
Pin A8 DQ4 — Data input/output 4
Pin A9 DQ5 — Data input/output 5
Pin A10 VSS — Ground
Pin A11 DQ6 — Data input/output 6
Pin A12 DQ7 — Data input/output 7

Typical Applications

K4A8G165WC-BCRC is suitable for 6 applications: High-Performance Computing, Networking Equipment, Industrial Controllers, Embedded Systems, Data Storage Systems, Test and Measurement.

🖥️

High-Performance Computing

The K4A8G165WC-BCRC provides 8Gb capacity and 2400 Mbps data rate, making it ideal for HPC systems that require high memory bandwidth for complex simulations and data processing. Its 512M x 16 organization supports wide data buses, and the low 1.2V supply reduces power consumption in large memory arrays. The device's high speed ensures fast data access, improving overall system performance.

🌐

Networking Equipment

In networking switches and routers, the K4A8G165WC-BCRC offers high bandwidth and reliability for packet buffering and forwarding tables. Its 2400 Mbps data rate ensures low latency, while the 8Gb density provides ample storage for routing tables. The device's dynamic ODT and ZQ calibration improve signal integrity in high-speed PCB designs, critical for 100GbE and beyond.

🏭

Industrial Controllers

The K4A8G165WC-BCRC is suitable for industrial controllers that require reliable, high-speed memory for real-time control and data logging. Its operating temperature range of 0°C to +95°C covers most industrial environments. The device's low power consumption and high reliability make it ideal for PLCs, robotics, and factory automation systems.

🧩

Embedded Systems

For embedded systems like single-board computers and IoT gateways, the K4A8G165WC-BCRC provides a balance of capacity, speed, and power efficiency. Its 8Gb density supports complex applications, while the 1.2V supply minimizes power draw. The 96-ball FBGA package is compact, fitting space-constrained designs. The device's features like auto precharge and data mask simplify memory management.

🖥️

Data Storage Systems

In SSDs and storage controllers, the K4A8G165WC-BCRC is used as cache memory to accelerate data access. Its high data rate and low latency improve read/write performance, while the 8Gb capacity provides sufficient cache size. The device's temperature-compensated self-refresh reduces power consumption during idle periods, extending battery life in portable storage devices.

🔧

Test and Measurement

The K4A8G165WC-BCRC is used in test and measurement equipment like oscilloscopes and logic analyzers for high-speed data acquisition and buffering. Its 2400 Mbps data rate enables fast sampling, and the 8Gb density allows long capture times. The device's reliable operation over temperature ensures consistent performance in lab environments.

What is the memory density and organization of K4A8G165WC-BCRC?
The K4A8G165WC-BCRC is an 8Gb DDR4 SDRAM organized as 512M x 16. This means it has 512 million addresses, each storing 16 bits of data, totaling 8 gigabits. According to the Samsung datasheet, this organization is ideal for systems requiring a 16-bit wide memory bus.
What is the operating voltage of K4A8G165WC-BCRC?
The K4A8G165WC-BCRC operates at a nominal VDD of 1.2V, with a range of 1.14V to 1.26V. It also requires a VPP supply of 2.5V for wordline boost. This low voltage reduces power consumption compared to DDR3, which operates at 1.5V.
What is the data rate of K4A8G165WC-BCRC?
The K4A8G165WC-BCRC supports a data rate of 2400 Mbps (megabits per second) per pin, which corresponds to DDR4-2400 (PC4-19200). This high data rate enables fast data transfer for demanding applications like servers and high-performance computing.
What is the package type of K4A8G165WC-BCRC?
The K4A8G165WC-BCRC is housed in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package, measuring 9mm x 13mm. This surface-mount package is designed for high-density PCB layouts and provides good thermal and electrical performance.
What is the operating temperature range of K4A8G165WC-BCRC?
The K4A8G165WC-BCRC operates over a case temperature range of 0°C to +95°C. This commercial temperature range is suitable for most consumer and industrial applications, but not for automotive or extreme environments.
Where can I buy K4A8G165WC-BCRC online?
You can purchase K4A8G165WC-BCRC from authorized distributors such as LCSC, JLCPCB, and Win Source. As of 2026-08-19, LCSC lists it at $31.67 for 1 piece, with 17 units in stock. Availability may vary, so check multiple distributors for the best price and lead time.
What is the price of K4A8G165WC-BCRC?
As of 2026-08-19, the price for K4A8G165WC-BCRC is approximately $31.67 for a single unit at LCSC. Volume pricing may be lower; for example, at 1000 units, the price could drop to around $23.00. Prices vary by distributor and quantity.
What is the lead time for K4A8G165WC-BCRC?
The lead time for K4A8G165WC-BCRC depends on distributor stock and demand. As of 2026-08-19, LCSC shows 17 units in stock, so immediate shipment is possible. For larger quantities, lead times may range from 4 to 12 weeks, depending on the distributor and market conditions.
Is K4A8G165WC-BCRC in stock?
As of 2026-08-19, K4A8G165WC-BCRC is in stock at LCSC with 17 units available. Other distributors like JLCPCB also list it. However, stock levels change frequently, so it is advisable to check real-time availability on distributor websites.
K4A8G165WC-BCRC vs K4A8G165WB-BCRC - what is the difference?
The K4A8G165WC-BCRC and K4A8G165WB-BCRC are both 8Gb DDR4 SDRAM from Samsung, but they differ in die revision. The 'C' in the part number indicates a newer C-die, while 'B' indicates an older B-die. The C-die typically offers improved performance and power efficiency. Both are pin-compatible and can be used as drop-in replacements, but the C-die version is preferred for new designs.
When should I choose K4A8G165WC-BCRC over K4A8G165WB-BCRC?
Choose the K4A8G165WC-BCRC when you need the latest C-die revision for better performance and power efficiency. The C-die offers improved timing margins and lower power consumption compared to the B-die. If you are designing a new system, the C-die is recommended. For existing designs using the B-die, the C-die is a drop-in replacement, but verify compatibility with your memory controller.
What is the best drop-in replacement for K4A8G165WC-BCRC?
The best drop-in replacement for K4A8G165WC-BCRC is the Samsung K4A8G165WB-BCRC, which is the B-die version with the same package and pinout. Other compatible alternatives include the K4A8G165WC-BCTD (same die, different speed grade) and cross-brand equivalents like the Micron MT40A512M16JY-07EAIT and SK Hynix H5AN8G6NDJR-XNC, all in 96-ball FBGA packages.
Where can I download the K4A8G165WC-BCRC datasheet PDF?
You can download the K4A8G165WC-BCRC datasheet PDF from multiple sources. The official Samsung datasheet is available on Alldatasheet at https://www.alldatasheet.com/datasheet-pdf/pdf/1643767/SAMSUNG/K4A8G165WC.html. Additionally, datasheet4u.com and digchip.com provide copies. The datasheet includes pinout, specifications, and timing diagrams.
What are the key specifications of K4A8G165WC-BCRC that engineers should know?
The K4A8G165WC-BCRC is an 8Gb DDR4 SDRAM with 512M x 16 organization, 2400 Mbps data rate, and 1.2V supply. It operates from 0°C to +95°C and comes in a 96-ball FBGA package. Key features include auto precharge, CRC, ZQ calibration, dynamic ODT, and data mask. These specs make it suitable for high-bandwidth applications in servers and networking.
What is the best Micron equivalent for K4A8G165WC-BCRC?
The best Micron equivalent for K4A8G165WC-BCRC is the MT40A512M16JY-07EAIT, which is an 8Gb DDR4 SDRAM with 512M x 16 organization, 2400 Mbps data rate, and 96-ball FBGA package. It is pin-compatible and electrically similar, making it a suitable cross-brand drop-in replacement. Verify timing parameters before use.

Engineering reference data for K4A8G165WC-BCRC — comparison, design guidance, and compliance information.

Selection Guide

Choose the K4A8G165WC-BCRC when you need a high-performance 8Gb DDR4 SDRAM with 512M x 16 organization and 2400 Mbps data rate. It is ideal for applications requiring high bandwidth and low power, such as servers, networking, and industrial controllers. If you prefer a B-die version for legacy compatibility, the K4A8G165WB-BCRC is a drop-in alternative. For cross-brand options, the Micron MT40A512M16JY-07EAIT and SK Hynix H5AN8G6NDJR-XNC offer similar specifications and are pin-compatible. Consider the K4A8G165WC-BCTD if you need a different speed grade. Always verify timing parameters and supply voltage compatibility with your memory controller before finalizing the design.

Comparison with Alternatives

Parameter This Product K4A8G165WB-BCRC K4A8G165WC-BCTD MT40A512M16JY-07EAIT H5AN8G6NDJR-XNC
Package 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology SK Hynix
Density 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb
Organization 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16
Data Rate 2400 Mbps 2400 Mbps 2400 Mbps 2400 Mbps 2400 Mbps
Supply Voltage 1.2V 1.2V 1.2V 1.2V 1.2V
Operating Temperature 0°C to +95°C 0°C to +95°C 0°C to +95°C 0°C to +95°C 0°C to +95°C

Key Differentiators

  • C-die process technology (vs K4A8G165WB-BCRC)
  • 2400 Mbps data rate (vs K4A8G165WC-BCTD)
  • Samsung brand reliability (vs MT40A512M16JY-07EAIT)

Design Notes

For DDR4 routing at 2400 Mbps, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms for differential pairs. Keep trace lengths matched within +/- 10 mils for DQ/DQS groups. Use ground planes adjacent to signal layers to minimize crosstalk. Refer to JEDEC DDR4 design guidelines for detailed layout rules.

Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the power pins. Use a 2.5V VPP supply for wordline boost, decoupled with 0.1uF. Ensure the power supply has low impedance at high frequencies to maintain signal integrity. Follow the recommended power-up sequence: VDD, VDDQ, then VPP.

The K4A8G165WC-BCRC operates up to +95°C case temperature. Ensure adequate airflow or heatsinking in high-ambient environments. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Monitor junction temperature to avoid exceeding the maximum rating.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.

Data verified on: 2026-08-19 — data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Samsung Electronics K4A8G165WC-BCRC K4A8G165WB-BCRC K4A8G165WC-BCTD MT40A512M16JY-07EAIT H5AN8G6NDJR-XNC DDR4 SDRAM SDRAM Memory IC FBGA-96 FBGA RoHS JEDEC 512M x 16 2400 Mbps 1.2V High-Performance Computing Networking Equipment Industrial Controllers
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