MT40A512M16LY-062E vs K4A8G165WC-BCWE Comparison
Detailed side-by-side comparison of MT40A512M16LY-062E by Micron Technology and K4A8G165WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16LY-062E
MT40A512M16LY-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16LY-062E β ActiveSamsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveSpecification Comparison
| Parameter | MT40A512M16LY-062E | K4A8G165WC-BCWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.65 | $38.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | β |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 Mbps |
| Clock Frequency | 1.6 GHz | β |
| Access Time | 19 ns | β |
| Supply Voltage VDD/VDDQ | 1.2 V +/- 60 mV | β |
| Supply Voltage VPP | 2.5 V (-125 mV, +250 mV) | β |
| Bank Architecture | 16 banks in 2 groups of 4 (x16) | β |
| Refresh | 8192-cycle; 64 ms at -40C to +85C, 32 ms >85C to +95C, 16 ms >95C | β |
| I/O Interface | 1.2 V pseudo open-drain | β |
| Features | Auto self-refresh, write leveling, dynamic ODT, CRC, data mask, auto precharge, async reset, ZQ calibration, on-die adjustable VREFDQ | β |
| Operating Temperature | -40C to +95C (IT grade) | β |
| Package | 96-ball FBGA (7.5 x 13.5 mm) | 96-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Density | β | 8 Gb |
| Supply Voltage (VDD) | β | 1.2 V |
| VPP Voltage | β | 2.5 V |
| Operating Temperature Range | β | 0Β°C to +95Β°C |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Burst Length | β | 8 (BL8) / 4 (BC4) |
| Number of Banks | β | 16 |
| Row Address Bits | β | 16 |
| Column Address Bits | β | 10 |
| Interface | β | Differential (CK, /CK) |
| JEDEC Standard | β | JEDEC DDR4 |