MT40A512M16TB-062E vs K4A8G165WC-BCWE Comparison
Detailed side-by-side comparison of MT40A512M16TB-062E by Micron Technology and K4A8G165WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16TB-062E
MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16TB-062E β ActiveSamsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveSpecification Comparison
| Parameter | MT40A512M16TB-062E | K4A8G165WC-BCWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $60.00 | $38.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | β |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 1600 MHz (DDR4-3200) | 3200 Mbps |
| Supply Voltage - VDD/VDDQ | 1.2V Β±60mV | β |
| Supply Voltage - VPP | 2.5V, -125mV, +250mV | β |
| tRCD | 19 ns | β |
| Refresh Time | 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C | β |
| Operating Temperature Range | 0Β°C to +95Β°C (standard), -40Β°C to +95Β°C (IT) | 0Β°C to +95Β°C |
| Package | 96-FBGA (7.5x13 mm) | 96-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel | Differential (CK, /CK) |
| Features | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | β |
| RoHS Status | Compliant | Compliant |
| REACH Status | Compliant | β |
| Density | β | 8 Gb |
| Supply Voltage (VDD) | β | 1.2 V |
| VPP Voltage | β | 2.5 V |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Burst Length | β | 8 (BL8) / 4 (BC4) |
| Number of Banks | β | 16 |
| Row Address Bits | β | 16 |
| Column Address Bits | β | 10 |
| JEDEC Standard | β | JEDEC DDR4 |