MT40A512M16TD-062E vs NT5AD512M16A4-HR Comparison

Detailed side-by-side comparison of MT40A512M16TD-062E by Micron Technology and NT5AD512M16A4-HR by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16TD-062E

MT40A512M16TD-062E - 8Gb DDR4 SDRAM 512Mx16 1.2V | Micron

MT40A512M16TD-062E βœ“ Active
Nanya Technology
NT5AD512M16A4-HR

NT5AD512M16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | Nanya

NT5AD512M16A4-HR βœ“ Active

Specification Comparison

Parameter MT40A512M16TD-062E NT5AD512M16A4-HR
Brand Micron Technology Nanya Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.90 $8.10
Memory Type DDR4 SDRAM (volatile DRAM) DDR4 SDRAM
Memory Size 8 Gbit β€”
Memory Organization 512M x 16 β€”
Data Rate 3200 MT/s (DDR4-3200) 3200 Mbps (PC4-25600)
Clock Frequency 1600 MHz β€”
Access Time 19 ns β€”
Supply Voltage (VDD) 1.2 V β€”
VPP Supply 2.5 V β€”
Interface Parallel β€”
Package 96-ball FBGA (7.5 x 13 mm) TFBGA-96
Mounting Type Surface Mount Surface Mount
Burst Length BL8 / BC4 β€”
Features Programmable data strobe preambles, ODT, TCSR β€”
Temperature Grade Commercial (0C to +85C); AUT/AIT/AAT variants available β€”
Operating Temperature [DATA_NEEDED: operating temperature range for TD grade] 0Β°C to +95Β°C
CAS Latency [DATA_NEEDED: CL value] β€”
RoHS Status [DATA_NEEDED: RoHS status] β€”
Organization β€” 512M x 16
Density β€” 8 Gb
Supply Voltage β€” 1.2 V
Auto Self-Refresh β€” Yes
Built-in Temperature Sensor β€” Yes
Auto Precharge β€” Yes
Asynchronous Reset β€” Yes
CRC Function β€” Yes
Data Mask β€” Yes
Write Leveling β€” Yes
ZQ Calibration β€” Yes

Datasheets & Resources

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