MT41K256M16HA-107G:E vs K4B4G1646D-BYH9 Comparison
Detailed side-by-side comparison of MT41K256M16HA-107G:E by Micron Technology and K4B4G1646D-BYH9 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16HA-107G:E
MT41K256M16HA-107G:E - 4Gbit DDR3L SDRAM 933MHz | Micron
MT41K256M16HA-107G:E β ActiveSamsung Electronics
K4B4G1646D-BYH9
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 β ActiveSpecification Comparison
| Parameter | MT41K256M16HA-107G:E | K4B4G1646D-BYH9 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.00 | $2.30 |
| Memory Type | DDR3L SDRAM | β |
| Memory Size | 4Gbit (256M x 16) | β |
| Clock Frequency | 933 MHz | β |
| Access Time | 20 ns | β |
| Supply Voltage | 1.35V | 1.35 V |
| Interface | Parallel | β |
| Package | 96-FBGA (9x14 mm) | 96FBGA |
| Mounting Type | Surface Mount | β |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0 ~ 85 Β°C |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | Yes |
| Data Bus Width | 16 bit | β |
| Organization | 256M x 16 | 256M x 16 |
| CAS Latency | [DATA_NEEDED: CAS latency] | Programmable |
| Number of Pins | 96 | β |
| Density | β | 4 Gb |
| Data Rate | β | 1333 Mbps |
| Number of Banks | β | 8 |
| Write Latency | β | Programmable |
| On-Die Termination | β | Yes |
| Internal Calibration | β | Yes |
| Halogen-Free | β | Yes |
| RoHS Compliant | β | Yes |
| Die Version | β | D-die |