MT41K256M16RE-125:D vs H5TC4G63AFR-PBI Comparison
Detailed side-by-side comparison of MT41K256M16RE-125:D by Micron Technology and H5TC4G63AFR-PBI by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16RE-125:D | H5TC4G63AFR-PBI |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.19 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V |
| Data Rate | 1600 MT/s | DDR3-1600 (PC3L-12800) |
| CAS Latency | 11 | Programmable |
| Package | FBGA-96 (9x14 mm) | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) |
| Operating Temperature | 0C to +95C (TC) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Burst Length | 8, 4 | 8 (BL8) |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| Ball Pitch | 0.8 mm | — |
| Total Memory Size | — | 4 Gb |
| Number of Banks | — | 8 |
| On-Die Termination (ODT) | — | Yes |
| Refresh Period | — | 7.8 us at 85°C |
| Operating Temperature Range | — | -40°C to +95°C |
| Mounting Type | — | Surface Mount |
| Number of Terminals | — | 96 |
| RoHS Status | — | Compliant |