MT41K256M16TW-107IT vs H5TC4G63AFR-PBA Comparison
Detailed side-by-side comparison of MT41K256M16TW-107IT by Micron Technology and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16TW-107IT - 4Gb DDR3L SDRAM 933MHz | Micron
MT41K256M16TW-107IT β Active
Specification Comparison
| Parameter | MT41K256M16TW-107IT | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.90 | $3.98 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit (256M x 16) | β |
| Data Rate | 933 MHz (DDR3L-1866) | 1866 Mbps (PC3L-14900) |
| Access Time | 20 ns | β |
| Supply Voltage | 1.35 V | β |
| Interface | Parallel | 16-bit I/O |
| Data Bus Width | 16 bit | β |
| Package | 96-FBGA (8x14 mm) | 96-ball FBGA |
| Operating Temperature | -40Β°C to +95Β°C | β |
| Mounting Type | Surface Mount | β |
| Auto Self-Refresh | Yes | Yes |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| RoHS Status | Compliant | β |
| Density | β | 4Gb |
| Organization | β | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | β | 1.35V |
| Ball Pitch | β | 0.8mm |
| Number of Banks | β | 8 |
| Burst Length | β | 8 and 4 (with burst chop) |
| CAS Latency (CL) | β | 11, 12, 13 |
| Operating Temperature Range | β | 0Β°C to +95Β°C (Tcase) |
| On-Die Termination (ODT) | β | Yes |
| Partial Array Self-Refresh | β | Yes |
| RoHS | β | Compliant |