NT5AD512M16C4-JRI vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of NT5AD512M16C4-JRI by Nanya Technology and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16C4-JRI
NT5AD512M16C4-JRI - 8Gb DDR4-3200 SDRAM | Nanya Technology
NT5AD512M16C4-JRI β Active
Specification Comparison
| Parameter | NT5AD512M16C4-JRI | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $75.58 | $55.68 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gbit | β |
| Organization | 512M x 16 | β |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Supply Voltage | 1.2 V | β |
| Operating Temperature Range | -40Β°C to +95Β°C | β |
| Package | TFBGA-96 | FBGA-96 (13x7.5 mm) |
| Mounting Type | Surface Mount | β |
| Auto Self-Refresh | Yes | Yes |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| Data Mask | Yes | Yes |
| Write Leveling | Yes | Yes |
| Dynamic On-Chip Termination | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| CRC Function | Yes | Yes |
| RoHS | Compliant | Compliant |
| Memory Size | β | 8 Gb |
| Memory Organization | β | 512M x16 |
| Supply Voltage (VDD) | β | 1.2 V (max 1.26 V) |
| Number of Terminals | β | 96 |
| Maximum Operating Temperature | β | 85 Β°C |
| Input/Output Type | β | COMMON |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |