RS512M16Z2DD-62DT vs H5AN8G6NCJR-VKC Comparison
Detailed side-by-side comparison of RS512M16Z2DD-62DT by Rayson and H5AN8G6NCJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Rayson
RS512M16Z2DD-62DT
RS512M16Z2DD-62DT - 8Gbit DDR4 SDRAM 512Mx16 | Rayson
RS512M16Z2DD-62DT β ActiveSK hynix
H5AN8G6NCJR-VKC
H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
H5AN8G6NCJR-VKC β ActiveSpecification Comparison
| Parameter | RS512M16Z2DD-62DT | H5AN8G6NCJR-VKC |
|---|---|---|
| Brand | Rayson | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $30.80 | $60.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Total Density | 8 Gbit | β |
| Data Rate | 3200 Mb/s/pin | 2666 Mbps |
| CAS Latency | 22 | [DATA_NEEDED: CAS Latency] |
| tRCD (min) | 13.75 ns | β |
| tRP (min) | 13.75 ns | β |
| tRAS (min) | 32 ns | β |
| tRC (min) | 45.75 ns | β |
| tCK (min) | 0.625 ns | β |
| Operating Temperature Range | 0Β°C to +95Β°C | β |
| Supply Voltage (VDD) | 1.14V to 1.26V | 1.2 V (1.14V to 1.26V) |
| Supply Voltage (VDDQ) | 2.375V to 2.75V | β |
| Clock Frequency | 1.6 GHz | β |
| Package | FBGA-96 (7.5x13 mm) | FBGA-96 |
| RoHS Status | Compliant | β |
| Density | β | 8 Gb |
| Operating Temperature | β | 0Β°C to +95Β°C |
| Operating Current (IDD2N) | β | 28 mA |
| Operating Current (IDD4R) | β | 45 mA |
| Burst Length | β | 8 (BC4) |
| Row Address Bits | β | [DATA_NEEDED: Row Address Bits] |
| Column Address Bits | β | [DATA_NEEDED: Column Address Bits] |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| RoHS | β | Compliant |