RS512M16Z2DD-62DT vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of RS512M16Z2DD-62DT by Rayson and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Rayson
RS512M16Z2DD-62DT
RS512M16Z2DD-62DT - 8Gbit DDR4 SDRAM 512Mx16 | Rayson
RS512M16Z2DD-62DT β ActiveSamsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSpecification Comparison
| Parameter | RS512M16Z2DD-62DT | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Rayson | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $30.80 | $6.55 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Total Density | 8 Gbit | β |
| Data Rate | 3200 Mb/s/pin | 3200 Mbps |
| CAS Latency | 22 | β |
| tRCD (min) | 13.75 ns | β |
| tRP (min) | 13.75 ns | β |
| tRAS (min) | 32 ns | β |
| tRC (min) | 45.75 ns | β |
| tCK (min) | 0.625 ns | β |
| Operating Temperature Range | 0Β°C to +95Β°C | β |
| Supply Voltage (VDD) | 1.14V to 1.26V | β |
| Supply Voltage (VDDQ) | 2.375V to 2.75V | β |
| Clock Frequency | 1.6 GHz | β |
| Package | FBGA-96 (7.5x13 mm) | 96FBGA |
| RoHS Status | Compliant | Compliant |
| Density | β | 8 Gb |
| Supply Voltage | β | 1.2 V |
| Access Time (CAS Latency) | β | 19 ns |
| Interface | β | Parallel |
| Mounting Type | β | Surface Mount |
| Operating Temperature | β | 0C to +85C |
| Burst Length | β | 8 |
| Bank Group Architecture | β | Yes |
| On-Die Termination (ODT) | β | Yes, dynamic ODT with ZQ calibration |
| Functions | β | Auto precharge, asynchronous reset, CRC, data mask |
| Lead Free | β | Yes |