K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
MPN: K4A8G165WB-BCWE ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.61 | $7.61 |
| 10 | $7.2 | $72.00 |
| 100 | $6.8 | $680.00 |
| 500 | $6.4 | $3,200.00 |
| 1,000 | $6 | $6,000.00 |
Drop-in alternatives for K4A8G165WB-BCWE — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A8G165WG-BCWE
✅ Drop-In✓ 99,999 In Stock
$44.5 / Unit
View Datasheet →K4A8G165WC-BCWE
✅ Drop-In📋 Reference alternative (not in catalog)
K4A8G165WB-BCTD
✅ Drop-In✓ 99,999 In Stock
$37 / Unit
View Datasheet →K4A8G165WB-BIWE
✅ Drop-In✓ 99,999 In Stock
$14.22 / Unit
View Datasheet →MT40A512M16JY-07EAIT:B
✅ Drop-In✓ 99,999 In Stock
$8.1 / Unit
View Datasheet →H5AN8G6NDJR-XNC
✅ Drop-In✓ 99,999 In Stock
$34.6 / Unit
View Datasheet →K4A8G165WB-BCWE Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 8 Gb |
| Memory Organization | 512M x 16 |
| Data Rate | 3200 Mbps |
| Supply Voltage | 1.2 V |
| Operating Temperature | 0°C to +85°C |
| Package | 96-FBGA |
| CAS Latency | 19 ns |
| Interface | Parallel |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Memory Format | DRAM |
| Technology | DDR4 |
| Burst Length | 8 |
K4A8G165WB-BCWE Pin Configuration
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — I/O power supply |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — I/O ground |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G165WB-BCWE is suitable for 6 applications: Server Memory, Networking Equipment, Consumer Electronics, Data Center Acceleration, Automotive Infotainment, Industrial Computing.
Server Memory
The K4A8G165WB-BCWE is ideal for server main memory, providing 8Gb density and 3200 Mbps data rate to handle high-bandwidth workloads. Its 1.2V operation reduces power consumption in data centers, and the 96-FBGA package enables high-density DIMMs. With a CAS latency of 19ns, it offers low latency for database and virtualization applications. The device supports error correction when paired with ECC controllers, ensuring data integrity in mission-critical servers.
Recommended
Networking Equipment
In networking equipment like routers and switches, the K4A8G165WB-BCWE provides fast packet buffering and routing table storage. Its 3200 Mbps data rate ensures high throughput for 100GbE and 400GbE interfaces. The 8Gb density allows for large forwarding tables, while the 1.2V supply minimizes heat generation in compact chassis. The device's burst length of 8 optimizes data transfer efficiency, reducing latency in high-speed packet processing.
Recommended
Consumer Electronics
The K4A8G165WB-BCWE is used in high-end consumer electronics such as gaming PCs, workstations, and smart TVs. Its 8Gb capacity supports multitasking and high-resolution graphics, while the 3200 Mbps speed ensures smooth performance in gaming and video editing. The 1.2V operation reduces power consumption, extending battery life in laptops. The 96-FBGA package allows for slim designs, making it suitable for ultrabooks and all-in-one PCs.
Recommended
Data Center Acceleration
For AI and machine learning workloads, the K4A8G165WB-BCWE provides high-bandwidth memory for GPU and FPGA accelerators. Its 3200 Mbps data rate and 8Gb density enable large model weights and intermediate data storage. The low latency of 19ns is critical for real-time inference. The device's 1.2V operation reduces power overhead in dense accelerator boards, and its parallel interface simplifies integration with high-speed interconnects like PCIe.
Recommended
Automotive Infotainment
The K4A8G165WB-BCWE can be used in automotive infotainment systems, providing memory for navigation, multimedia, and driver assistance features. Its 8Gb capacity supports high-resolution displays and real-time sensor data processing. The 0°C to +85°C temperature range is suitable for cabin environments. The 1.2V supply reduces heat in the dashboard, and the 96-FBGA package withstands vibration. For under-hood applications, consider the industrial temperature variant.
Recommended
Industrial Computing
In industrial PCs and embedded systems, the K4A8G165WB-BCWE offers reliable memory for process control and data logging. Its 8Gb density supports large applications, and the 3200 Mbps speed ensures fast data acquisition. The 0°C to +85°C range covers most factory environments, but for extreme conditions, the -40°C to +95°C variant is available. The 1.2V operation reduces power consumption in 24/7 operation, and the FBGA package provides robust solder joints.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G165WB-BCWE — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G165WG-BCWE | K4A8G165WC-BCWE | K4A8G165WB-BCTD | K4A8G165WB-BIWE | MT40A512M16JY-07EAIT:B | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CAS Latency | 19 ns | 19 ns | 19 ns | 19 ns | 19 ns | 19 ns | 19 ns |
Key Differentiators
- B-die revision known for overclocking (vs K4A8G165WG-BCWE)
- Wide operating temperature range (vs K4A8G165WB-BCTD)
- Proven compatibility (vs MT40A512M16JY-07EAIT:B)
Design Notes
For DDR4 routing at 3200 Mbps, maintain 50-ohm single-ended impedance and 100-ohm differential impedance for data and clock lines. Keep trace lengths matched within 10 mils for each byte lane. Use a solid ground plane beneath the memory device and minimize vias to reduce signal reflections. Refer to the Samsung DDR4 layout guidelines for detailed routing rules.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the balls. Use a 10uF bulk capacitor on the board for each power rail. The 1.2V supply should have low ripple (<50mV) to ensure stable operation. Follow the power distribution network (PDN) design in the datasheet to minimize voltage droop during high-speed switching.
The K4A8G165WB-BCWE dissipates approximately 1.5W under typical operation. Ensure adequate airflow or a heatsink if the ambient temperature exceeds 70°C. The 96-FBGA package has a thermal resistance of about 20°C/W, so keep the junction temperature below 95°C for reliability. Use thermal vias under the package to improve heat transfer to the PCB.
Compliance Information
RoHS compliant per Samsung datasheet. Not AEC-Q100 qualified; use industrial temp variant for wider range.
